17898356. EMBEDDED NANOPARTICLES FOR ON-DIE THERMAL ENHANCEMENT OF HYBRID BONDING AND ASSOCIATED SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)
EMBEDDED NANOPARTICLES FOR ON-DIE THERMAL ENHANCEMENT OF HYBRID BONDING AND ASSOCIATED SYSTEMS AND METHODS
Organization Name
Inventor(s)
Bang-Ning Hsu of Taichung (TW)
Kyle K. Kirby of Eagle ID (US)
Byung Hoon Moon of Taichung (TW)
EMBEDDED NANOPARTICLES FOR ON-DIE THERMAL ENHANCEMENT OF HYBRID BONDING AND ASSOCIATED SYSTEMS AND METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17898356 titled 'EMBEDDED NANOPARTICLES FOR ON-DIE THERMAL ENHANCEMENT OF HYBRID BONDING AND ASSOCIATED SYSTEMS AND METHODS
Simplified Explanation
The semiconductor die described in the patent application includes a semiconductor substrate, a dielectric layer, a bond pad, and a region with embedded nanoparticles.
- The semiconductor substrate is the base material on which the other components are built.
- The dielectric layer is a non-conductive material that insulates the components on the substrate.
- The bond pad is a connection point for external components, with a recessed top surface for protection.
- The region with embedded nanoparticles is located near the bond pad to provide thermal energy when exposed to an externally-applied field.
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- Potential Applications
- Semiconductor manufacturing
- Electronics industry
- Thermal management systems
- Problems Solved
- Improved thermal management in semiconductor devices
- Enhanced reliability of bond pads
- Increased efficiency in heat dissipation
- Benefits
- Better performance and longevity of semiconductor devices
- Enhanced thermal conductivity
- Improved overall system reliability
Original Abstract Submitted
A semiconductor die is provided, comprising a semiconductor substrate, a dielectric layer over the semiconductor substrate, a bond pad in the dielectric layer, the bond pad including an exposed top surface that is recessed with respect to a surface of the dielectric layer opposite to the semiconductor substrate, and a region including a plurality of embedded nanoparticles in the dielectric layer, wherein the region is located proximate to the bond pad to supply thermal energy to the bond pad in response to exposing the plurality of embedded nanoparticles to an externally-applied field.
