17898107. METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS
Organization Name
Inventor(s)
Martin J. Barclay of Middleton ID (US)
Mojtaba Asadirad of Boise ID (US)
Matthew Holland of Victor NY (US)
METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17898107 titled 'METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS
Simplified Explanation
The microelectronic device described in the patent application comprises a stack structure, a staircase structure, a first liner material, an etch stop structure, and conductive contact structures.
- The stack structure includes conductive structures and insulative structures arranged in tiers, with sidewalls horizontally bounding the staircase structure.
- The staircase structure has steps that include edges of tiers of the stack structure.
- The first liner material is on the steps and the sidewalls, with horizontally extending portions on the steps and vertically extending portions on the sidewalls.
- The etch stop structure is on the horizontally extending portions of the first liner material, with the vertically extending portions of the first liner material being free of the etch stop structure.
- The conductive contact structures extend through the etch stop structure and the first liner material to the conductive structures.
- Potential Applications:**
- Memory devices - Electronic systems
- Problems Solved:**
- Improved integration of conductive contact structures in microelectronic devices - Enhanced performance and reliability of memory devices
- Benefits:**
- Increased efficiency in microelectronic device manufacturing - Improved functionality and durability of memory devices
Original Abstract Submitted
A microelectronic device comprises a stack structure, a staircase structure, a first liner material, an etch stop structure, and conductive contact structures. The stack structure includes conductive structures and insulative structures arranged in tiers. The stack structure includes sidewalls horizontally bounding the staircase structure. The staircase structure has steps includes edges of tiers of the stack structure. The first liner material is on the steps and the sidewalls and includes horizontally extending portions on the steps and vertically extending portions on the sidewalls. The etch stop structure is on the horizontally extending portions of the first liner material, the vertically extending portions of the first liner material being free of the etch stop structure. The conductive contact structures extend through the etch stop structure and the first liner material and to the conductive structures. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.
