17897784. CROSS-TEMPERATURE COMPENSATION BASED ON MEDIA ENDURANCE IN MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
CROSS-TEMPERATURE COMPENSATION BASED ON MEDIA ENDURANCE IN MEMORY DEVICES
Organization Name
Inventor(s)
Hyungseok Kim of Santa Clara CA (US)
Vamsi Pavan Rayaprolu of Santa Clara CA (US)
Sampath K. Ratnam of San Jose CA (US)
CROSS-TEMPERATURE COMPENSATION BASED ON MEDIA ENDURANCE IN MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17897784 titled 'CROSS-TEMPERATURE COMPENSATION BASED ON MEDIA ENDURANCE IN MEMORY DEVICES
Simplified Explanation
The abstract describes a method for performing a read operation on a set of memory cells in a memory device by adjusting the bitline voltage based on various parameters.
- Receiving a read request for a set of memory cells
- Determining the media endurance metric and programming temperature of the memory cells
- Determining the current operating temperature of the memory device
- Calculating a voltage adjustment value based on the above metrics
- Adjusting the bitline voltage with the calculated adjustment value
- Performing the read operation with the adjusted bitline voltage
Potential Applications
- Memory devices in electronic devices
- Data storage systems
- Solid-state drives
Problems Solved
- Extending the lifespan of memory cells
- Improving read operation efficiency
- Enhancing overall performance of memory devices
Benefits
- Increased reliability of memory devices
- Improved data retention
- Enhanced memory cell endurance
- Optimal performance under varying temperatures
Original Abstract Submitted
An example method of performing read operation comprises: receiving a read request with respect to a set of memory cells of a memory device; determining a value of a media endurance metric of the set of memory cells; determining a programing temperature associated with the set of memory cells; determining a current operating temperature of the memory device; determining a voltage adjustment value based on the value of the media endurance metric, the programming temperature, and the current operating temperature; adjusting, by the voltage adjustment value, a bitline voltage applied to a bitline associated with the set of memory cells; and performing, using the adjusted bitline voltage, a read operation with respect to the set of memory cells.
