17894540. UTILIZING LAST SUCCESSFUL READ VOLTAGE LEVEL IN MEMORY ACCESS OPERATIONS simplified abstract (Micron Technology, Inc.)
Contents
UTILIZING LAST SUCCESSFUL READ VOLTAGE LEVEL IN MEMORY ACCESS OPERATIONS
Organization Name
Inventor(s)
Kyungjin Kim of San Jose CA (US)
UTILIZING LAST SUCCESSFUL READ VOLTAGE LEVEL IN MEMORY ACCESS OPERATIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17894540 titled 'UTILIZING LAST SUCCESSFUL READ VOLTAGE LEVEL IN MEMORY ACCESS OPERATIONS
Simplified Explanation
The abstract describes a method for performing read operations on a memory device, involving identifying a block family associated with a memory page, determining a block family-based read voltage level, performing a read operation, determining a new read voltage level through error correction, and associating the new read voltage level with the block family.
- Method for performing read operations on a memory device
- Involves identifying a block family associated with a memory page
- Determines a block family-based read voltage level
- Performs a read operation using the block family-based read voltage level
- Determines a new read voltage level through error correction
- Associates the new read voltage level with the block family
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- Potential Applications
- Data storage devices
- Solid-state drives
- Memory modules
- Problems Solved
- Improving read operation accuracy
- Enhancing error correction capabilities
- Optimizing memory device performance
- Benefits
- Increased reliability of read operations
- Improved data integrity
- Enhanced memory device efficiency
Original Abstract Submitted
An example method of performing read operation with respect to a memory device comprises: receiving a request to perform a read operation with respect to a memory page of a memory device; identifying a block family associated with a block comprising the memory page; determining a block family-based read voltage level associated with the block family; performing, using the block family-based read voltage level, a read operation with respect to the memory page; determining, by performing an error correction operation with respect to the memory page, a new read voltage level associated with the block family; and associating, by a last successful read voltage level memory data structure, the new read voltage level as a last the successful read voltage level with the block family.
