17894102. SPLIT VIA STRUCTURE FOR SEMICONDUCTOR DEVICE PACKAGING simplified abstract (Micron Technology, Inc.)

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SPLIT VIA STRUCTURE FOR SEMICONDUCTOR DEVICE PACKAGING

Organization Name

Micron Technology, Inc.

Inventor(s)

Hong Wan Ng of Singapore (SG)

Seng Kim Ye of Singapore (SG)

Kelvin Tan Aik Boo of Singapore (SG)

Ling Pan of Singapore (SG)

See Hiong Leow of Singapore (SG)

SPLIT VIA STRUCTURE FOR SEMICONDUCTOR DEVICE PACKAGING - A simplified explanation of the abstract

This abstract first appeared for US patent application 17894102 titled 'SPLIT VIA STRUCTURE FOR SEMICONDUCTOR DEVICE PACKAGING

Simplified Explanation

The abstract describes a semiconductor device assembly with split vias on a substrate, each having a half-moon shaped via land with a specific radius of curvature.

  • The semiconductor device assembly includes a substrate with split vias.
  • The split vias have half-moon shaped via lands with a specific radius of curvature.
  • The split vias pass through the substrate and are entirely within a circular region with the same radius of curvature.

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      1. Potential Applications
  • This technology can be used in semiconductor manufacturing for improved connectivity and signal transmission.
  • It can be applied in high-frequency applications where signal integrity is crucial.
      1. Problems Solved
  • Provides a more efficient and reliable way to create vias on a substrate.
  • Helps in reducing signal loss and improving overall performance of semiconductor devices.
      1. Benefits
  • Enhanced signal transmission due to the specific design of the split vias.
  • Improved reliability and connectivity in semiconductor devices.
  • Potential for higher performance in high-frequency applications.


Original Abstract Submitted

A semiconductor device assembly including a substrate; a first split via including a first via land that is disposed on a surface of the substrate and that has a first footprint with a half-moon shape with a first radius of curvature, and a first via that passes through the substrate and that has a second radius of curvature, wherein the first via is disposed within the first footprint; and a second split via including a second via land that is disposed on the surface of the substrate and that has a second footprint with the half-moon shape with the first radius of curvature, and a second via that passes through the substrate and that has the second radius of curvature, wherein the second via is disposed within the second footprint, wherein the first and second via lands are disposed entirely within a circular region having the first radius of curvature.