17893654. WORD LINE DRIVERS FOR MULTIPLE-DIE MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
WORD LINE DRIVERS FOR MULTIPLE-DIE MEMORY DEVICES
Organization Name
Inventor(s)
Fatma Arzum Simsek-ege of Boise ID (US)
Mingdong Cui of Folsom CA (US)
WORD LINE DRIVERS FOR MULTIPLE-DIE MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17893654 titled 'WORD LINE DRIVERS FOR MULTIPLE-DIE MEMORY DEVICES
Simplified Explanation
The abstract describes methods, systems, and devices for word line drivers for multiple-die memory devices. A memory device consists of a first semiconductor die with memory cells and access lines, and a second semiconductor die with access line driver circuitry. The second die is located near the first die, and electrical contacts are formed to connect the access line driver circuitry of the second die with the access line conductors of the first die. Cavities may be formed through the second die and at least a portion of the first die, and electrical contacts are formed between the semiconductor dies by filling the cavities with a conductive material.
- Memory device includes a first semiconductor die with memory cells and access lines, and a second semiconductor die with access line driver circuitry.
- Second die is located near the first die, and electrical contacts are formed to connect the access line driver circuitry of the second die with the access line conductors of the first die.
- Cavities may be formed through the second die and at least a portion of the first die, with electrical contacts formed by filling the cavities with a conductive material.
Potential Applications
- Memory devices in electronic devices
- Data storage applications
Problems Solved
- Efficient connection between memory cells and access line driver circuitry
- Integration of multiple semiconductor dies in a memory device
Benefits
- Improved performance of memory devices
- Enhanced data storage capabilities
- Cost-effective manufacturing process
Original Abstract Submitted
Methods, systems, and devices for word line drivers for multiple-die memory devices are described. A memory device may include a first semiconductor die associated with at least memory cells and corresponding access lines of the memory device, and a second semiconductor die associated with at least access line driver circuitry of the memory device. The second semiconductor die may be located in contact with or otherwise adjacent to the first semiconductor die, and electrical contacts may be formed to couple the access line driver circuitry of the second semiconductor die with the access line conductors of the first semiconductor die. For example, cavities may be formed through the second semiconductor die and at least a portion of the first semiconductor die, and the electrical contacts may be formed between the semiconductor dies at least in part from forming a conductive material in the cavities.
