17887239. BALANCED CODEWORDS FOR REDUCING A SELECTED STATE IN MEMORY CELLS simplified abstract (Micron Technology, Inc.)

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BALANCED CODEWORDS FOR REDUCING A SELECTED STATE IN MEMORY CELLS

Organization Name

Micron Technology, Inc.

Inventor(s)

Christophe Vincent Antoine Laurent of Agrate Brianza (MB) (IT)

Riccardo Muzzetto of Arcore (MB) (IT)

BALANCED CODEWORDS FOR REDUCING A SELECTED STATE IN MEMORY CELLS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17887239 titled 'BALANCED CODEWORDS FOR REDUCING A SELECTED STATE IN MEMORY CELLS

Simplified Explanation

- Memory device balances codewords to reduce a selected state in memory cells. - Sequence of data bits divided into sets associated with different bit-positions in a coding scheme. - First codeword balanced in binary domain to reach target ratio of logic values. - Remaining states balanced in state domain to reach overall target distribution of the three states. - Codewords generated for other sets of data bits to be written to ternary cells.

Potential Applications

- Data storage systems - Error correction in memory devices - Communication systems

Problems Solved

- Reducing selected state in memory cells - Balancing codewords for optimal distribution of logic values

Benefits

- Improved memory cell performance - Enhanced data reliability - Efficient data storage and retrieval


Original Abstract Submitted

Methods, systems, and devices for balanced codewords for reducing a selected state in memory cells are described. A memory device may divide a sequence of data bits into sets of bits associated with different bit-positions in a coding scheme. The memory device may then balance a first codeword that includes the first set of the data bits in the binary domain to reach a target ratio of logic values for the codeword. Using the first codeword and the other set(s) of data bits, the memory device may balance the remaining two states in the state domain to reach an overall target distribution of the three states. The memory device may then generate one or more codeword(s) for the other set(s) of data bits so that the memory device can write all of the codewords to ternary cells.