17884450. PROGRAMMABLE CHALCOGENIDE CAPACITORS simplified abstract (Micron Technology, Inc.)

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PROGRAMMABLE CHALCOGENIDE CAPACITORS

Organization Name

Micron Technology, Inc.

Inventor(s)

Hongmei Wang of Boise ID (US)

Huiqi Gong of Redmond WA (US)

Peng Zhao of Boise ID (US)

Jingshan Wang of Eagan MN (US)

Giovanni Ferrari of Boise ID (US)

PROGRAMMABLE CHALCOGENIDE CAPACITORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17884450 titled 'PROGRAMMABLE CHALCOGENIDE CAPACITORS

Simplified Explanation

The abstract describes methods, systems, and devices for programmable chalcogenide capacitors.

  • A first programming pulse is applied to a capacitor with a chalcogenide material to adjust its capacitance from a first value to a second value.
  • A pulse is then applied to the capacitor based on the first programming pulse.
  • A first voltage is stored in the capacitor after adjusting its capacitance, and this voltage is stored based on the capacitor having the second capacitance.

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      1. Potential Applications
  • Memory devices
  • Programmable analog circuits
  • Signal processing applications
      1. Problems Solved
  • Efficiently adjusting capacitance in chalcogenide capacitors
  • Storing voltage based on capacitance changes
      1. Benefits
  • Improved performance in memory devices
  • Enhanced flexibility in programmable analog circuits
  • Increased efficiency in signal processing applications


Original Abstract Submitted

Methods, systems, and devices for programmable chalcogenide capacitors are described. A first programming pulse may be applied, for a first duration, to a capacitor comprising a chalcogenide material to adjust a capacitance of the capacitor from a first capacitance to a second capacitance. A pulse may be applied to the capacitor based on applying the first programming pulse to the capacitor. A first voltage may be stored in the capacitor based on adjusting the capacitance of the capacitor from the first capacitance to the second capacitance, and the first voltage may be stored based on the capacitor having the second capacitance.