17884299. MERGED CAVITIES AND BURIED ETCH STOPS FOR THREE-DIMENSIONAL MEMORY ARRAYS simplified abstract (Micron Technology, Inc.)
MERGED CAVITIES AND BURIED ETCH STOPS FOR THREE-DIMENSIONAL MEMORY ARRAYS
Organization Name
Inventor(s)
Yoshiaki Fukuzumi of Yokohama (JP)
David H. Wells of Boise ID (US)
Byeung Chul Kim of Boise ID (US)
Richard J. Hill of Boise ID (US)
Paolo Tessariol of Arcore (MB) (IT)
MERGED CAVITIES AND BURIED ETCH STOPS FOR THREE-DIMENSIONAL MEMORY ARRAYS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17884299 titled 'MERGED CAVITIES AND BURIED ETCH STOPS FOR THREE-DIMENSIONAL MEMORY ARRAYS
Simplified Explanation
Methods, systems, and devices for merged cavities and buried etch stops for three-dimensional memory arrays are described in this patent application. The invention involves forming a row of cavities using a cavity etching process and then removing the material separating the cavities to merge them and form a trench. The trench can be formed from multiple rows of cavities or a pattern of cavities with different quantities of rows at different locations along the trench. Etch stopping material portions, known as etch stops, can be formed at locations corresponding to the cavities prior to the cavity etching process by oxidizing exposed material surfaces.
- A row of cavities is formed using a cavity etching process.
- The material separating the cavities is removed to merge them and form a trench.
- The trench can be formed from multiple rows of cavities or a pattern of cavities with different quantities of rows at different locations.
- Etch stops are formed at locations corresponding to the cavities by oxidizing exposed material surfaces.
Potential Applications
- Three-dimensional memory arrays
- Semiconductor manufacturing
Problems Solved
- Efficient formation of trenches in three-dimensional memory arrays
- Improved control over the cavity etching process
Benefits
- Enhanced memory array performance
- Increased manufacturing efficiency
- Improved reliability and durability of memory devices
Original Abstract Submitted
Methods, systems, and devices for merged cavities and buried etch stops for three-dimensional memory arrays are described. For example, a row of cavities may be formed using a cavity etching process and material separating cavities of the row may be removed to merge the row of cavities to form a trench. In some cases, a trench may be formed from multiple rows of cavities. Additionally, or alternatively, a trench may be formed from a pattern of cavities that includes different quantities of rows at different locations along the trench. In some examples, etch stopping material portions (e.g., etch stops) may be formed at locations corresponding to cavities prior to the cavity etching process. For example, exposed material surfaces at locations corresponding to cavities or trenches may be oxidized to form etch stops.
