17883736. THICK GATE OXIDE TRANSISTOR DEVICE AND METHOD simplified abstract (Micron Technology, Inc.)
Contents
THICK GATE OXIDE TRANSISTOR DEVICE AND METHOD
Organization Name
Inventor(s)
Bingwu Liu of Meridian ID (US)
Shivani Srivastava of Boise ID (US)
Dan Mihai Mocuta of Boise ID (US)
THICK GATE OXIDE TRANSISTOR DEVICE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 17883736 titled 'THICK GATE OXIDE TRANSISTOR DEVICE AND METHOD
Simplified Explanation
The abstract describes electronic devices with transistors having thick gate dielectric layers, including multiple layer gate dielectrics with different widths.
- Transistors with thick gate dielectric layers are disclosed.
- The gate dielectric includes a first layer with a certain width and a second layer with a smaller width on top of the first layer.
- The second layer has a width smaller than the first layer.
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- Potential Applications
- This technology can be applied in the manufacturing of electronic devices such as transistors.
- It can be used in the development of more efficient and reliable electronic components.
- Problems Solved
- Helps in improving the performance and reliability of electronic devices.
- Provides a solution for enhancing the functionality of transistors.
- Benefits
- Increased efficiency and reliability of electronic devices.
- Enhanced performance of transistors.
- Potential for developing advanced electronic components.
Original Abstract Submitted
Electronic devices and methods are disclosed, including transistors with thick gate dielectric layers. Selected devices and methods shown include multiple layer gate dielectrics. Selected devices and methods shown include a gate dielectric with a first layer having a first width, and a second layer over the first layer, wherein the second layer has a second width smaller than the first width.
