17876326. LATERAL ETCH STOPS FOR ACCESS LINE FORMATION IN A MEMORY DIE simplified abstract (Micron Technology, Inc.)
Contents
LATERAL ETCH STOPS FOR ACCESS LINE FORMATION IN A MEMORY DIE
Organization Name
Inventor(s)
Raja Kumar Varma Manthena of Boise ID (US)
Yoshiaki Fukuzumi of Yokohama (JP)
LATERAL ETCH STOPS FOR ACCESS LINE FORMATION IN A MEMORY DIE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17876326 titled 'LATERAL ETCH STOPS FOR ACCESS LINE FORMATION IN A MEMORY DIE
Simplified Explanation
Methods, systems, and devices for lateral etch stops for access line formation in a memory die are described in this patent application. The memory die is formed with isolation regions that act as an etch stop to limit the extent of voids formed by removing a sacrificial material between layers of a dielectric region.
- First trenches are formed through a stack of alternating layers of a dielectric material and a sacrificial material.
- Second trenches are formed between the first trench and an array portion of the memory die, or between pairs of the first trenches.
- The materials formed in the first trenches create a boundary or restriction zone that limits the extent of the material removal operation.
Potential applications of this technology:
- Memory die fabrication
- Semiconductor manufacturing
Problems solved by this technology:
- Limiting the extent of void formation during the removal of sacrificial material
- Ensuring precise and controlled access line formation in a memory die
Benefits of this technology:
- Improved reliability and performance of memory dies
- Enhanced control over the fabrication process
- Reduction in defects and errors during manufacturing
Original Abstract Submitted
Methods, systems, and devices for lateral etch stops for access line formation in a memory die are described. A memory die may be formed with isolation regions that provide an etch stop to limit the extent of voids formed by removing a sacrificial material between layers of a dielectric region. For example, first trenches may be formed through a stack of alternating layers of a dielectric material and a sacrificial material, in which one or more materials may formed. Second trenches may be formed between a first trench and an array portion of the memory die, or between pairs of the first trenches, which may support the removal of at least a portion of the sacrificial material to form voids for access line formation. However, the materials formed in the first trenches may provide a boundary, or a restriction zone, that limits an extent of the material removal operation.
