17873991. PERFORMING SENSE OPERATIONS IN MEMORY simplified abstract (Micron Technology, Inc.)
Contents
PERFORMING SENSE OPERATIONS IN MEMORY
Organization Name
Inventor(s)
Michele Maria Venturini of Milan (IT)
Umberto Di Vincenzo of Capriate San Gervasio (IT)
Ferdinando Bedeschi of Biassono (IT)
Riccardo Muzzetto of Arcore (IT)
Christophe Vincent Antoine Laurent of Agrate Brianza (IT)
Christian Caillat of Boise ID (US)
PERFORMING SENSE OPERATIONS IN MEMORY - A simplified explanation of the abstract
This abstract first appeared for US patent application 17873991 titled 'PERFORMING SENSE OPERATIONS IN MEMORY
Simplified Explanation
The patent application describes apparatuses, methods, and systems for performing sense operations in memory. The memory consists of a group of memory cells, and the circuitry is configured to perform a sense operation on the group. The sense operation involves two steps: a first sense operation in a first polarity to determine the quantity of memory cells in a particular data state, and a second sense operation in a second polarity (opposite to the first polarity) to determine the data state of the memory cells in the group. The second sense operation is a count-based sense operation that uses the determined quantity of memory cells in the particular data state as a counting threshold to determine the data state of the memory cells in the group.
- The patent application discloses a method for performing sense operations in memory cells.
- The memory cells are organized in a group, and the circuitry is configured to perform the sense operation on this group.
- The sense operation involves two steps: a first sense operation in a first polarity and a second sense operation in a second polarity.
- The first sense operation determines the quantity of memory cells in a particular data state.
- The second sense operation determines the data state of the memory cells in the group.
- The second sense operation is a count-based sense operation that uses the determined quantity of memory cells in the particular data state as a counting threshold.
Potential applications of this technology:
- Memory systems in electronic devices such as smartphones, tablets, and computers.
- Data storage devices such as solid-state drives (SSDs) and memory cards.
- Embedded memory in various electronic devices.
Problems solved by this technology:
- Improved accuracy and efficiency in determining the data state of memory cells.
- Enhanced reliability and performance of memory systems.
- Reduction in power consumption and overall system cost.
Benefits of this technology:
- Faster and more reliable data retrieval from memory cells.
- Increased storage capacity and density in memory systems.
- Improved overall performance and efficiency of electronic devices.
Original Abstract Submitted
Apparatuses, methods, and systems for performing sense operations in memory are disclosed. The memory can have a group of memory cells, and circuitry can be configured to perform a sense operation on the group, wherein performing the sense operation includes performing a first sense operation in a first polarity on the group of memory cells to determine a quantity of the memory cells of the group that are in a particular data state, and performing a second sense operation in a second polarity on the group of memory cells to determine a data state of the memory cells of the group. The second polarity is opposite the first polarity, and the second sense operation is a count-based sense operation that uses the determined quantity of memory cells in the particular data state as a counting threshold to determine the data state of the memory cells of the group.
