17865565. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
Contents
Memory Circuitry And Method Used In Forming Memory Circuitry
Organization Name
Inventor(s)
Harsh Narendrakumar Jain of Boise ID (US)
Jordan Chess of Meridian ID (US)
Collin Howder of Boise ID (US)
Memory Circuitry And Method Used In Forming Memory Circuitry - A simplified explanation of the abstract
This abstract first appeared for US patent application 17865565 titled 'Memory Circuitry And Method Used In Forming Memory Circuitry
Simplified Explanation
The patent application describes a method for forming memory circuitry using a stack of alternating tiers. The stack extends from a memory-array region into a stair-step region, which has a flight of stairs in a vertical cross-section.
- The method involves forming masking material directly above the flight of stairs.
- Ion implantation is used to create different-composition regions above each individual stair.
- One of the regions is selectively removed, leaving the other as a mask.
- The remaining region is used to etch through the tiers in each stair, creating multiple different-depth treads in the stairs.
Potential applications of this technology:
- Memory circuitry in electronic devices such as computers, smartphones, and tablets.
- Storage devices like solid-state drives and flash memory.
Problems solved by this technology:
- Efficient formation of memory circuitry with multiple different-depth treads.
- Improved performance and capacity of memory devices.
Benefits of this technology:
- Increased memory density and storage capacity.
- Enhanced performance and speed of memory devices.
- Cost-effective manufacturing process for memory circuitry.
Original Abstract Submitted
A method used in forming memory circuitry comprises forming a stack comprising vertically-alternating first tiers and second tiers, with the stack extending from a memory-array region into a stair-step region. The stair-step region comprises a flight of stairs in a first vertical cross-section along a first direction. Masking material is formed directly above the flight of stairs. A species is ion implanted into the masking material to form different-composition first and second regions that are directly above individual of the stairs along a second direction that is orthogonal to the first direction. One of the first and the second regions is removed selectively relative to the other of the first and the second regions. After the removing, the other of the first and second regions is used as a mask while etching through one of the first tiers and one of the second tiers in the individual stairs to form multiple different-depth treads in the individual stairs in a second vertical cross-section along the second direction. Other embodiments, including structure, are disclosed.
