17860470. Sense Amplifier Reference Voltage Through Sense Amplifier Latch Devices simplified abstract (Micron Technology, Inc.)
Sense Amplifier Reference Voltage Through Sense Amplifier Latch Devices
Organization Name
Inventor(s)
Eric Carman of San Francisco CA (US)
Sense Amplifier Reference Voltage Through Sense Amplifier Latch Devices - A simplified explanation of the abstract
This abstract first appeared for US patent application 17860470 titled 'Sense Amplifier Reference Voltage Through Sense Amplifier Latch Devices
Simplified Explanation
The abstract describes a patent application for sense amplifiers used in memory devices. These sense amplifiers include latch transistors that latch values based on charges in memory cells.
- The sense amplifier uses a first latch transistor to apply a reference voltage to a first gut node of the sense amplifier.
- The sense amplifier also applies a charge to a second gut node from a memory cell corresponding to the sense amplifier.
- The sense amplifier latches a value based on the relationship between the reference voltage and the charge.
Potential Applications
- Memory devices
- Computer systems
- Electronic devices
Problems Solved
- Efficiently latching values based on charges in memory cells
- Improving the performance of sense amplifiers in memory devices
Benefits
- Enhanced memory device performance
- Improved reliability and accuracy in reading memory cell charges
- Increased efficiency in memory operations
Original Abstract Submitted
Sense amplifiers for memory devices include latch transistors that are used to latch values based on charges in memory cells. A first latch transistor applies a reference voltage to a first gut node of the sense amplifier via one of these latch transistors. The sense amplifier also applies a charge to a second gut node from a memory cell corresponding to the sense amplifier. The sense amplifier also latches a value in the sense amplifier based on a relationship between the reference voltage and the charge.
