17851393. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
Contents
Memory Circuitry And Method Used In Forming Memory Circuitry
Organization Name
Inventor(s)
Jivaan Kishore Jhothiraman of Meridian ID (US)
Memory Circuitry And Method Used In Forming Memory Circuitry - A simplified explanation of the abstract
This abstract first appeared for US patent application 17851393 titled 'Memory Circuitry And Method Used In Forming Memory Circuitry
Simplified Explanation
The patent application describes a memory circuitry that consists of strings of memory cells arranged in a stack. The stack is made up of alternating layers of insulative and conductive tiers. The memory cells extend through these layers in a memory-array region.
- The memory circuitry is made up of strings of memory cells arranged in a stack.
- The stack consists of alternating layers of insulative and conductive tiers.
- The memory cells extend through these layers in a memory-array region.
The stack extends into a stair-step region, which includes a cavity with a flight of stairs in a vertical cross-section. The cavity is filled with insulating material, with the treads of the stairs made of a conducting material from the conductive tiers.
- The stack extends into a stair-step region with a cavity that has a flight of stairs.
- The cavity is filled with insulating material, with the treads of the stairs made of conducting material.
The insulating material in the cavity is composed of two different materials. The first material is on top of the treads of the stairs, while the second material is directly above the first material. The first material is lower in height than the second material.
- The insulating material in the cavity is made up of two different materials.
- The first material is on top of the treads of the stairs, and the second material is directly above the first material.
- The first material is lower in height than the second material.
Conductive vias extend through both the first and second materials, with each via directly above and in contact with the conducting material of the respective tread.
- Conductive vias go through both the first and second materials.
- Each via is directly above and in contact with the conducting material of the respective tread.
Potential applications of this technology:
- Memory circuitry for electronic devices
- Data storage systems
Problems solved by this technology:
- Efficient arrangement of memory cells in a stack
- Improved insulation and conductivity in memory circuitry
Benefits of this technology:
- Higher memory capacity in a compact design
- Enhanced performance and reliability of memory circuitry
Original Abstract Submitted
Memory circuitry comprising strings of memory cells comprises a stack comprising vertically-alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers in a memory-array region. The insulative tiers and the conductive tiers extend from the memory-array region into a stair-step region. The stair-step region comprises a cavity comprising a flight of stairs in a first vertical cross-section along a first direction. Insulating material is in the cavity above the flight of stairs. The insulating material comprises first material atop treads of the stairs of the flight of stairs. Individual of the treads comprise conducting material of one of the conductive tiers. Insulative second material of different composition from that of the first material is directly above the first material. The first material has an uppermost surface in the cavity that is below an uppermost surface of the insulative second material in the cavity. Conductive vias extend through the first material and the insulative second material. Individual of the conductive vias are directly above and directly against the conducting material of the respective tread. Other embodiments, including method, are disclosed.
