17848021. MEMORY DEVICE INCLUDING HIGH-ASPECT-RATIO CONDUCTIVE CONTACTS simplified abstract (Micron Technology, Inc.)
Contents
MEMORY DEVICE INCLUDING HIGH-ASPECT-RATIO CONDUCTIVE CONTACTS
Organization Name
Inventor(s)
Shuangqiang Luo of Boise ID (US)
Indra V. Chary of Boise ID (US)
MEMORY DEVICE INCLUDING HIGH-ASPECT-RATIO CONDUCTIVE CONTACTS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17848021 titled 'MEMORY DEVICE INCLUDING HIGH-ASPECT-RATIO CONDUCTIVE CONTACTS
Simplified Explanation
The patent application describes an apparatus and method for forming memory cells with control gates on different tiers. The apparatus includes memory cells, control gates, a dielectric structure, and conductive contacts.
- The apparatus includes memory cells located on different tiers.
- Control gates are located on respective tiers to control the memory cells.
- A dielectric structure is placed over the control gates.
- Two conductive contacts are formed in the dielectric structure, each contacting a different control gate.
- The first conductive contact has a certain length, while the second conductive contact has a different length.
- The second conductive contact is divided into two portions, with the second portion located between the first portion and the second control gate.
- The first portion of the second conductive contact has a certain width, while the second portion has a greater width.
Potential applications of this technology:
- Memory devices: The described apparatus can be used in memory devices to improve their performance and efficiency.
- Semiconductor industry: This technology can be applied in the semiconductor industry to enhance the design and functionality of memory cells.
Problems solved by this technology:
- Unequal lengths: The invention addresses the issue of having conductive contacts with unequal lengths, which can impact the performance and reliability of memory cells.
- Varying widths: The technology solves the problem of having different widths in different portions of the conductive contacts, ensuring proper electrical connections.
Benefits of this technology:
- Improved performance: The described apparatus can enhance the performance of memory cells by providing more precise and efficient control.
- Enhanced reliability: By addressing the issues of unequal lengths and varying widths, the technology improves the reliability and stability of memory cells.
- Design flexibility: The invention allows for different lengths and widths in conductive contacts, providing design flexibility for memory devices.
Original Abstract Submitted
Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes memory cells located on tiers; control gates for the memory cells and located on respective tiers; a dielectric structure over the control gates; a first conductive contact formed in the dielectric structure and contacting a first control gate, the first conductive contact having a first length; and a second conductive contact formed in the dielectric structure and contacting the second control gate, the second conductive contact having a second length unequal to the first length, wherein the second conductive contact includes a first portion and a second portion, the second portion is between the first portion and the second control gate, the first portion including a first region having a first width, the second portion including a second region having a second width, and the second width being greater than the first width.
