17823472. METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS
Organization Name
Inventor(s)
John M. Meldrim of Boise ID (US)
Jivaan Kishore Jhothiraman of Meridian ID (US)
Shuangqiang Luo of Boise ID (US)
METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17823472 titled 'METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS
Simplified Explanation
The microelectronic device described in the patent application includes a stack structure with blocks separated by dielectric slot structures, each block containing a vertically alternating sequence of conductive and insulative structures arranged in tiers. One of the blocks has a stadium structure with opposing staircase structures and a filled trench within its boundaries.
- The device includes a stadium structure with opposing staircase structures.
- The filled trench within the stadium structure has a dielectric liner material.
- At least one dielectric structure doped with carbon and boron overlaps the steps of the stadium structure.
- Potential Applications:**
- Semiconductor manufacturing
- Microelectronics industry
- Integrated circuit fabrication
- Problems Solved:**
- Improved performance of microelectronic devices
- Enhanced reliability of stack structures
- Increased efficiency in semiconductor manufacturing processes
- Benefits:**
- Higher density of components in microelectronic devices
- Better insulation between conductive structures
- Enhanced overall performance and reliability of electronic devices
Original Abstract Submitted
A microelectronic device includes a stack structure comprising blocks separated from one another by dielectric slot structures and each including a vertically alternating sequence of conductive structures and insulative structures arranged in tiers. At least one of the blocks comprising a stadium structure comprising opposing staircase structures each having steps comprising edges of the tiers; and a filled trench vertically overlying and within horizontal boundaries of the stadium structure of the at least one of the blocks. The filled trench includes a dielectric liner material on the opposing staircase structures of the stadium structure and on inner sidewalls of the two bridge regions and at least one dielectric structure doped with one or more of carbon and boron on the dielectric liner material, the at least one dielectric structure horizontally overlapping the steps of the stadium structure.
