17823365. BLOCK FAILURE PROTECTION FOR ZONE MEMORY SYSTEM simplified abstract (Micron Technology, Inc.)
BLOCK FAILURE PROTECTION FOR ZONE MEMORY SYSTEM
Organization Name
Inventor(s)
Sanjay Subbarao of Irvine CA (US)
BLOCK FAILURE PROTECTION FOR ZONE MEMORY SYSTEM - A simplified explanation of the abstract
This abstract first appeared for US patent application 17823365 titled 'BLOCK FAILURE PROTECTION FOR ZONE MEMORY SYSTEM
Simplified Explanation
- Memory sub-system with block failure protection - Supports zones, such as RAIN technique for data error-correction - Non-parity zones matched based on filling rate - Parity generated for stored data across matching zones - Generated parity stored in a parity zone
Potential Applications
- Data storage systems - Cloud computing infrastructure - Solid-state drives
Problems Solved
- Data loss due to block failures - Data corruption in memory devices - Ensuring data integrity in memory systems
Benefits
- Improved reliability of memory sub-systems - Enhanced data protection - Efficient error-correction mechanisms
Original Abstract Submitted
Various embodiments provide block failure protection for a memory sub-system that supports zones, such a memory sub-system that uses a RAIN (redundant array of independent NAND-type flash memory devices) technique for data error-correction. For some embodiments, non-parity zones of a memory sub-system that are filling up at a similar rate are matched together, a parity is generated for stored data from across the matching zones, and the generated parity is stored in a parity zone of the memory device.
