17823276. ELECTRONIC DEVICES COMPRISING BLOCKING REGIONS, AND RELATED ELECTRONIC SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)

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ELECTRONIC DEVICES COMPRISING BLOCKING REGIONS, AND RELATED ELECTRONIC SYSTEMS AND METHODS

Organization Name

Micron Technology, Inc.

Inventor(s)

John D. Hopkins of Meridian ID (US)

ELECTRONIC DEVICES COMPRISING BLOCKING REGIONS, AND RELATED ELECTRONIC SYSTEMS AND METHODS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17823276 titled 'ELECTRONIC DEVICES COMPRISING BLOCKING REGIONS, AND RELATED ELECTRONIC SYSTEMS AND METHODS

Simplified Explanation

The patent application describes an electronic device with blocking regions, a source stack with conductive materials, a source contact, and a doped semiconductive material. Tiers of alternating conductive and dielectric materials are present, along with pillars that extend through these layers and into the source stack.

  • The electronic device has one or more blocking regions.
  • It includes a source stack with conductive materials.
  • A source contact is vertically adjacent to the source stack.
  • A doped semiconductive material is vertically adjacent to the source contact.
  • Tiers of alternating conductive and dielectric materials are present.
  • Pillars extend through the layers and into the source stack.
  • The blocking regions are laterally adjacent to the semiconductive material.

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      1. Potential Applications
  • Semiconductor devices
  • Memory devices
  • Integrated circuits
      1. Problems Solved
  • Improved performance of electronic devices
  • Enhanced conductivity and efficiency
  • Better integration of materials in electronic components
      1. Benefits
  • Higher efficiency in electronic devices
  • Improved conductivity
  • Enhanced performance and reliability


Original Abstract Submitted

An electronic device comprising one or more blocking regions. The electronic device also comprises a source stack comprising one or more conductive materials, a source contact vertically adjacent to the source stack, and a doped semiconductive material vertically adjacent to the source contact. Tiers of alternating conductive materials and dielectric materials are vertically adjacent to the doped semiconductive material, and pillars extend through the tiers of alternating conductive materials and dielectric materials, the doped semiconductive material, and the source contact and into the source stack. The one or more blocking regions are laterally adjacent to the semiconductive material. Additional electronic devices, electronic systems, and methods are also disclosed.

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