17822421. MICROELECTRONIC DEVICES INCLUDING STADIUM STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
MICROELECTRONIC DEVICES INCLUDING STADIUM STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS
Organization Name
Inventor(s)
Sidhartha Gupta of Boise ID (US)
Indra V. Chary of Boise ID (US)
Richard J. Hill of Boise ID (US)
Umberto Maria Meotto of Dietlikon (CH)
MICROELECTRONIC DEVICES INCLUDING STADIUM STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17822421 titled 'MICROELECTRONIC DEVICES INCLUDING STADIUM STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS
Simplified Explanation
The patent application describes a microelectronic device with a unique stack structure and conductive contact structures.
- The stack structure consists of tiers of conductive material and insulative material, with conductive contact structures.
- The stack structure is divided into blocks that extend horizontally in parallel in one direction and are separated by insulative slot structures in another direction.
- Some blocks have a lower stadium structure with steps at the edges of some tiers, and an upper stadium structure with additional steps at the edges of other tiers, which have greater tread widths.
- Conductive contact structures are in contact with the additional steps of the upper stadium structure in at least one of the blocks.
- Potential Applications:**
- Memory devices
- Electronic systems
- Problems Solved:**
- Efficient organization and connection of conductive materials in a microelectronic device
- Improved performance and functionality of memory devices and electronic systems
- Benefits:**
- Enhanced conductivity and connectivity within the device
- Increased efficiency and reliability of memory devices and electronic systems
Original Abstract Submitted
A microelectronic device includes a stack structure having tiers each including conductive material vertically neighboring insulative material and conductive contact structures. The stack structure is divided into blocks horizontally extending in parallel in a first direction and separated from one another in a second direction orthogonal to the first direction by insulative slot structures. At least one of the blocks includes a lower stadium structure having steps including edges of some of the tiers, and an upper stadium structure vertically overlying the lower stadium structure and having additional steps including edges of some other of the tiers vertically overlying the some of the tiers. The additional steps have greater tread widths in the first direction than the steps. Conductive contact structures are in contact with the additional steps of the upper stadium structure of the at least one of the blocks. Memory devices and electronic systems are also described.
