17819575. MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS, AND METHODS OF FORMING THE SAME simplified abstract (Micron Technology, Inc.)

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MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS, AND METHODS OF FORMING THE SAME

Organization Name

Micron Technology, Inc.

Inventor(s)

Umberto Maria Meotto of Dietlikon (CH)

Anna Maria Conti of Milano (IT)

Paolo Tessariol of Arcore (IT)

MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS, AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17819575 titled 'MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS, AND METHODS OF FORMING THE SAME

Simplified Explanation

The microelectronic device described in the patent application includes a stack structure with tiers of insulative material and conductive material, separated into blocks with slot structures interposed between them.

  • The stack structure is divided into at least two blocks.
  • Each block includes insulative material and conductive material.
  • Slot structures are placed horizontally between the blocks.
  • The slot structures contain additional insulative material and contact structures that extend through to the underlying source tier.

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      1. Potential Applications
  • Microprocessors
  • Memory devices
  • Integrated circuits
      1. Problems Solved
  • Improved insulation between conductive materials
  • Enhanced connectivity within the device
  • Increased efficiency and performance
      1. Benefits
  • Higher reliability
  • Better signal transmission
  • Increased functionality and miniaturization


Original Abstract Submitted

A microelectronic device includes a stack structure including tiers each including insulative material and conductive material vertically adjacent the insulative material. The stack structure divided into at least two blocks separated from one another. The microelectronic device further includes at least one slot structure horizontally interposed between the at least two blocks of the stack structure. The at least one slot structure including additional insulative material and at least one contact structure extending through the additional insulative material to source tier underlying the stack structure.