17819567. MODEL FOR PREDICTING MEMORY SYSTEM PERFORMANCE simplified abstract (Micron Technology, Inc.)
Contents
MODEL FOR PREDICTING MEMORY SYSTEM PERFORMANCE
Organization Name
Inventor(s)
Vamsi Pavan Rayaprolu of Santa Clara CA (US)
Aswin Thiruvengadam of El Dorado Hills CA (US)
MODEL FOR PREDICTING MEMORY SYSTEM PERFORMANCE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17819567 titled 'MODEL FOR PREDICTING MEMORY SYSTEM PERFORMANCE
Simplified Explanation
The abstract describes methods, systems, and devices for predicting memory system performance by generating read commands, performing read operations, and updating a model based on the performance of the memory device.
- Memory system generates read commands and performs read operations at a memory device.
- Information indicating performance of the memory device is generated based on the read operations.
- One or more coefficients of a model correlating the information with a change in a read window are updated.
- The memory system models the change in a read window based on the information and updates parameters associated with read operations.
- A second set of read operations is performed at the memory device using the updated parameters.
Potential Applications
- Improving memory system performance
- Enhancing predictive maintenance in memory devices
Problems Solved
- Predicting memory system performance
- Optimizing read operations in memory devices
Benefits
- Increased efficiency in memory system operations
- Enhanced reliability of memory devices
- Improved overall system performance
Original Abstract Submitted
Methods, systems, and devices for a model for predicting memory system performance are described. A memory system may generate a set of read commands and perform a first set of read operations at a memory device according to the generated read commands. The memory system may generate information indicating a performance of the memory device based on the first set of read operations and may update one or more coefficients of a model that correlates the information with a change in a read window. In some cases, the memory system may model the change in a read window based on the information and update one or more parameters associated with read operations based on the modelled change in the read window. The memory system may perform a second set of read operations at the memory device using the one or more updated parameters.
