17815742. INDICATING A STATUS OF A MEMORY BUILT-IN SELF-TEST USING A DATA MASK INVERSION BIT simplified abstract (Micron Technology, Inc.)

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INDICATING A STATUS OF A MEMORY BUILT-IN SELF-TEST USING A DATA MASK INVERSION BIT

Organization Name

Micron Technology, Inc.

Inventor(s)

Scott E. Schaefer of Boise ID (US)

INDICATING A STATUS OF A MEMORY BUILT-IN SELF-TEST USING A DATA MASK INVERSION BIT - A simplified explanation of the abstract

This abstract first appeared for US patent application 17815742 titled 'INDICATING A STATUS OF A MEMORY BUILT-IN SELF-TEST USING A DATA MASK INVERSION BIT

Simplified Explanation

The abstract describes a method for performing a memory built-in self-test (BIST) and indicating its status using a data mask inversion (DMI) bit. The memory device reads bits associated with the memory BIST from a mode register. It identifies a first DMI bit for indicating the BIST status and a second DMI bit not associated with the BIST status. The first DMI bit is set to a value indicating that the BIST is enabled, and the memory BIST is performed based on this setting.

  • The patent describes a method for performing a memory built-in self-test (BIST) and indicating its status using a data mask inversion (DMI) bit.
  • The memory device reads bits associated with the memory BIST from a mode register.
  • It identifies a first DMI bit for indicating the BIST status and a second DMI bit not associated with the BIST status.
  • The first DMI bit is set to a value indicating that the BIST is enabled.
  • The memory BIST is performed based on the setting of the first DMI bit.

Potential applications of this technology:

  • Memory testing: The method can be used in memory devices to perform built-in self-tests and indicate their status, ensuring the reliability and functionality of the memory.
  • System diagnostics: By performing memory BIST and indicating the status, the method can help diagnose and troubleshoot issues related to memory in various electronic systems.

Problems solved by this technology:

  • Memory testing efficiency: The method provides a streamlined approach to perform memory BIST, allowing for efficient testing and identification of any issues.
  • Reliability assurance: By indicating the status of the memory BIST, the method ensures that the memory is functioning properly, enhancing the overall reliability of electronic systems.

Benefits of this technology:

  • Improved testing accuracy: The use of DMI bits allows for precise indication of the memory BIST status, ensuring accurate testing results.
  • Time and cost savings: The streamlined approach to memory testing provided by this method can save time and resources in the testing and validation processes.
  • Enhanced system reliability: By performing memory BIST and indicating its status, the method helps ensure the reliability and functionality of electronic systems that rely on memory.


Original Abstract Submitted

Implementations described herein relate to performing a memory built-in self-test and indicating a status of the memory built-in self-test using a data mask inversion (DMI) bit. A memory device may read one or more bits, associated with a memory built-in self-test, that are stored in a mode register of the memory device. The memory device may identify a first DMI bit of the memory device that is associated with indicating a status of the memory built-in self-test and a second DMI bit of the memory device that is not associated with indicating the status of the memory built-in self-test. The memory device may set the first DMI bit to a first value based on the one or more bits indicating that the memory built-in self-test is enabled. The memory device may perform the memory built-in self-test based on setting the first DMI bit to the first value.

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