17815420. MEMORY DEVICE ASSEMBLY WITH NON-IMPINGED LEAKER DEVICES simplified abstract (Micron Technology, Inc.)
Contents
MEMORY DEVICE ASSEMBLY WITH NON-IMPINGED LEAKER DEVICES
Organization Name
Inventor(s)
MEMORY DEVICE ASSEMBLY WITH NON-IMPINGED LEAKER DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17815420 titled 'MEMORY DEVICE ASSEMBLY WITH NON-IMPINGED LEAKER DEVICES
Simplified Explanation
The patent application describes implementations of integrated assemblies and memory devices.
- The integrated assembly consists of a cell plate, a top electrode, and an insulator that separates the top electrode from bottom electrodes.
- The assembly includes two groups of bottom electrodes, each coupled to the cell plate via a corresponding group of leaker devices.
- The first group of leaker devices is located in a region that includes the top electrode and the insulator.
- The second group of leaker devices is located in a region that does not include the top electrode or the insulator.
- Both groups of leaker devices have the same electrical properties.
Potential applications of this technology:
- Memory devices
- Integrated circuits
- Electronic devices requiring efficient data storage
Problems solved by this technology:
- Efficiently storing and retrieving data in memory devices
- Reducing power consumption in integrated circuits
- Improving the performance of electronic devices
Benefits of this technology:
- Improved data storage capacity
- Reduced power consumption
- Enhanced performance and reliability of electronic devices
Original Abstract Submitted
Implementations described herein relate to various structures, integrated assemblies, and memory devices. In some implementations, an integrated assembly includes a cell plate, a top electrode, and an insulator that separates the top electrode from bottom electrodes. The integrated assembly may include a first group of bottom electrodes that are coupled to the cell plate via a corresponding first group of leaker devices, wherein a first region between the first group of leaker includes the top electrode and the insulator. The integrated assembly may include a second group of bottom electrodes that are electrically coupled to the cell plate via a corresponding second group of leaker devices, wherein a second region between the second group of leaker devices does not include the top electrode and does not include the insulator. The first group of leaker devices and the second group of leaker devices have substantially identical electrical properties.
