17815359. METHODS OF FORMING THE MICROELECTRONIC DEVICES, AND RELATED MICROELECTONIC DEVICES AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)

METHODS OF FORMING THE MICROELECTRONIC DEVICES, AND RELATED MICROELECTONIC DEVICES AND ELECTRONIC SYSTEMS

Organization Name

Micron Technology, Inc.

Inventor(s)

Terrence B. Mcdaniel of Boise ID (US)

Vinay Nair of Boise ID (US)

Russell A. Benson of Boise ID (US)

Christopher W. Petz of Boise ID (US)

Si-Woo Lee of Boise ID (US)

Silvia Borsari of Boise ID (US)

Ping Chieh Chiang of Boise ID (US)

Luca Fumagalli of Rio Rancho NM (US)

METHODS OF FORMING THE MICROELECTRONIC DEVICES, AND RELATED MICROELECTONIC DEVICES AND ELECTRONIC SYSTEMS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17815359 titled 'METHODS OF FORMING THE MICROELECTRONIC DEVICES, AND RELATED MICROELECTONIC DEVICES AND ELECTRONIC SYSTEMS

Simplified Explanation

The abstract describes a method of forming a microelectronic device by creating interlayer dielectric material over a base structure consisting of semiconductive structures separated by insulative structures. Sacrificial line structures are formed over the interlayer dielectric material, with trenches separating them. These sacrificial line structures overlap some of the semiconductive structures, while the trenches overlap other semiconductive structures. Plug structures are formed within the trenches, extending through the interlayer dielectric material and into the other semiconductive structures. The sacrificial line structures are then replaced with additional trenches. Conductive contact structures are formed within the additional trenches, extending through the interlayer dielectric material and into some of the semiconductive structures. Finally, conductive line structures are formed within the additional trenches, in contact with the conductive contact structures.

• The method involves forming interlayer dielectric material over a base structure of semiconductive and insulative structures.
• Sacrificial line structures and trenches are formed over the interlayer dielectric material.
• The sacrificial line structures overlap some semiconductive structures, while the trenches overlap other semiconductive structures.
• Plug structures are formed within the trenches, extending through the interlayer dielectric material and into the other semiconductive structures.
• The sacrificial line structures are replaced with additional trenches.
• Conductive contact structures are formed within the additional trenches, extending through the interlayer dielectric material and into some semiconductive structures.
• Conductive line structures are formed within the additional trenches, in contact with the conductive contact structures.

Potential Applications:

• This method can be applied in the manufacturing of microelectronic devices, such as integrated circuits and semiconductor devices.

Problems Solved:

• The method allows for the formation of conductive structures within a microelectronic device, enabling electrical connections between different semiconductive structures.

Benefits:

• The method provides a means to create reliable and efficient electrical connections within a microelectronic device.
• It allows for the integration of multiple semiconductive structures in a compact and organized manner.
• The use of sacrificial line structures and additional trenches improves the precision and accuracy of the conductive structures formed.

Original Abstract Submitted

A method of forming a microelectronic device comprises forming interlayer dielectric material over a base structure comprising semiconductive structures separated from one another by insulative structures. Sacrificial line structures separated from one another by trenches are formed over the interlayer dielectric material. The sacrificial line structures horizontally overlap some of the semiconductive structures, and the trenches horizontally overlap some other of the semiconductive structures. Plug structures are formed within horizontal areas of the trenches and extend through the interlayer dielectric material and into the some other of the semiconductive structures. The sacrificial line structures are replaced with additional trenches. Conductive contact structures are formed within horizontal areas of the additional trenches and extend through the interlayer dielectric material and into the some of the semiconductive structures. Conductive line structures are formed within the additional trenches and in contact with the conductive contact structures.