17812141. MICROELECTRONIC DEVICES WITH CONTACTS EXTENDING THROUGH METAL OXIDE REGIONS OF STEP TREADS, AND RELATED SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)
MICROELECTRONIC DEVICES WITH CONTACTS EXTENDING THROUGH METAL OXIDE REGIONS OF STEP TREADS, AND RELATED SYSTEMS AND METHODS
Organization Name
Inventor(s)
Mithun Kumar Ramasahayam of Meridian ID (US)
Jordan D. Greenlee of Boise ID (US)
Harsh Narendrakumar Jain of Boise ID (US)
Jiewei Chen of Meridian ID (US)
Indra V. Chary of Boise ID (US)
MICROELECTRONIC DEVICES WITH CONTACTS EXTENDING THROUGH METAL OXIDE REGIONS OF STEP TREADS, AND RELATED SYSTEMS AND METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17812141 titled 'MICROELECTRONIC DEVICES WITH CONTACTS EXTENDING THROUGH METAL OXIDE REGIONS OF STEP TREADS, AND RELATED SYSTEMS AND METHODS
Simplified Explanation
The patent application describes a microelectronic device that consists of a stack with alternating insulative and conductive structures arranged in tiers. Within the stack, there is a staircased stadium with steps at different tier elevations.
- The steps in the staircased stadium are formed by the upper surface area of a conductive structure and a metal oxide region that extends through the conductive structure.
- A pair of conductive contact structures extends to one of the steps.
- One of the contact structures terminates at the tread of the step, within the area of the conductive structure.
- The other contact structure extends through the tread of the step, within the upper surface area of the metal oxide region.
Potential applications of this technology:
- Microelectronic devices and systems
- Integrated circuits
- Semiconductor devices
Problems solved by this technology:
- Provides a structure for efficient electrical contact in microelectronic devices
- Allows for vertical integration of insulative and conductive structures
- Enables precise control of electrical connections within the device
Benefits of this technology:
- Improved performance and functionality of microelectronic devices
- Enhanced electrical contact reliability
- Increased integration density in semiconductor devices
Original Abstract Submitted
Microelectronic devices include a stack with a vertically alternating sequence of insulative and conductive structures arranged in tiers. A staircased stadium within the stack comprises steps at different tier elevations of a group of the tiers. Treads of the steps are each provided by an upper surface area of one of the conductive structures within the group of the tiers and by an upper surface area of a metal oxide region extending through the one of the conductive structures. A pair of conductive contact structures extends to one of the steps. A first conductive contact structure of the pair terminates at the tread of the step, within the area of the conductive structure. A second conductive contact structure of the pair extends through the tread of the step, within the upper surface area of the metal oxide region. Related fabrication methods and electronic systems are also disclosed.
