17809144. DYNAMIC ROW HAMMERING THRESHOLD FOR MEMORY simplified abstract (Micron Technology, Inc.)
Contents
DYNAMIC ROW HAMMERING THRESHOLD FOR MEMORY
Organization Name
Inventor(s)
Sujeet V. Ayyapureddi of Boise ID (US)
DYNAMIC ROW HAMMERING THRESHOLD FOR MEMORY - A simplified explanation of the abstract
This abstract first appeared for US patent application 17809144 titled 'DYNAMIC ROW HAMMERING THRESHOLD FOR MEMORY
Simplified Explanation
Methods, systems, and devices for a dynamic row hammering threshold for memory are described in this patent application. The memory device implements a dynamic threshold for a set of multiple rows of the memory device, which helps decrease the likelihood of a large quantity of refresh operations for rows that are close to being hammered occurring within a short time span.
- The memory device determines the quantity of rows that exceed a row hammering threshold during a refresh duration.
- The memory device also determines the total quantity of activate operations performed across the set of rows during the refresh duration.
- Based on these determinations, the memory device alters the dynamic threshold.
- The dynamic threshold can be altered based on the quantity of rows, the quantity of activate operations, or both.
Potential Applications
- This technology can be applied in various memory devices, such as RAM (Random Access Memory) modules, to prevent row hammering and improve overall performance and reliability.
Problems Solved
- Row hammering is a phenomenon where repeated activation of certain rows in a memory device can cause bit flips in nearby rows, leading to data corruption and system instability.
- By implementing a dynamic threshold, this technology helps mitigate the risk of row hammering and reduces the occurrence of refresh operations for rows that are close to being hammered.
Benefits
- Improved memory device performance and reliability by reducing the likelihood of row hammering.
- Enhanced data integrity and system stability by preventing bit flips caused by row hammering.
- Optimal utilization of memory resources by dynamically adjusting the threshold based on the actual quantity of rows and activate operations.
Original Abstract Submitted
Methods, systems, and devices for a dynamic row hammering threshold for memory are described. A memory device may implement a dynamic threshold, such as a threshold quantity of activate operations or a row hammering threshold, for a set of multiple rows of the memory device. For example, the memory device may determine a quantity of rows which exceed a row hammering threshold during a refresh duration and a total quantity of activate operations performed across the set of rows during the refresh duration, and may alter the dynamic threshold based on the quantity of rows, the quantity of activate operations, or both. By altering the dynamic threshold, the memory device may decrease a likelihood that a relatively large quantity of refresh operations for rows that are close to being hammered occur within a short time span.
