17807314. ENABLING OR DISABLING ON-DIE ERROR-CORRECTING CODE FOR A MEMORY BUILT-IN SELF-TEST simplified abstract (Micron Technology, Inc.)

From WikiPatents
Jump to navigation Jump to search

ENABLING OR DISABLING ON-DIE ERROR-CORRECTING CODE FOR A MEMORY BUILT-IN SELF-TEST

Organization Name

Micron Technology, Inc.

Inventor(s)

Scott E. Schaefer of Boise ID (US)

ENABLING OR DISABLING ON-DIE ERROR-CORRECTING CODE FOR A MEMORY BUILT-IN SELF-TEST - A simplified explanation of the abstract

This abstract first appeared for US patent application 17807314 titled 'ENABLING OR DISABLING ON-DIE ERROR-CORRECTING CODE FOR A MEMORY BUILT-IN SELF-TEST

Simplified Explanation

The patent application describes a method for enabling or disabling on-die error-correcting code (ECC) for a memory built-in self-test. Here are the key points:

  • The memory device reads bits stored in a mode register to determine whether the memory built-in self-test should be performed with on-die ECC disabled or enabled.
  • Based on the identified mode, the memory device performs the memory built-in self-test and selectively tests for single-bit errors.
  • The on-die ECC can be disabled or enabled during the memory built-in self-test, allowing for flexibility in testing and error correction.

Potential applications of this technology:

  • Memory testing: This method can be used in memory devices to perform built-in self-tests and identify single-bit errors, helping to ensure the reliability of memory systems.
  • Error correction: By selectively enabling or disabling on-die ECC during the self-test, this technology allows for targeted testing and error correction, improving the efficiency of error correction mechanisms.

Problems solved by this technology:

  • Flexibility in testing: By providing the option to enable or disable on-die ECC during the self-test, this method allows for different testing scenarios and strategies, depending on the specific requirements of the memory device.
  • Efficient error correction: By selectively testing for single-bit errors based on the identified mode, this technology optimizes the error correction process, focusing on the most relevant errors and reducing unnecessary overhead.

Benefits of this technology:

  • Improved reliability: By performing built-in self-tests and selectively testing for single-bit errors, this method helps to identify and correct memory errors, enhancing the overall reliability of memory systems.
  • Enhanced efficiency: The ability to enable or disable on-die ECC during the self-test allows for targeted testing and error correction, improving the efficiency of memory testing and error correction mechanisms.


Original Abstract Submitted

Implementations described herein relate to enabling or disabling on-die error-correcting code for a memory built-in self-test. A memory device may read one or more bits, associated with a memory built-in self-test, that are stored in a mode register of the memory device. The memory device may identify, based on the one or more bits, whether the memory built-in self-test is to be performed with on-die error-correcting code (ECC) disabled or with on-die ECC enabled. The memory device may perform the memory built-in self-test, and selectively test for one or more single-bit errors, based on identifying whether the memory built-in self-test is to be performed with the on-die ECC disabled or with the on-die ECC enabled.