17805586. MEMORY DEVICE ASSEMBLY WITH A LEAKER DEVICE simplified abstract (Micron Technology, Inc.)

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MEMORY DEVICE ASSEMBLY WITH A LEAKER DEVICE

Organization Name

Micron Technology, Inc.

Inventor(s)

Fatma Arzum Simsek-ege of Boise ID (US)

Ashonita A. Chavan of Boise ID (US)

MEMORY DEVICE ASSEMBLY WITH A LEAKER DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17805586 titled 'MEMORY DEVICE ASSEMBLY WITH A LEAKER DEVICE

Simplified Explanation

The patent application describes various structures, integrated assemblies, and memory devices. One such memory device includes multiple memory cells with specific components and arrangements.

  • Each memory cell consists of a bottom electrode in the shape of an open top cylinder, containing a support pillar.
  • The memory cell also includes a top electrode and an insulator that separates the top and bottom electrodes.
  • Additionally, a leaker device with an open top cylinder shape is present in the memory cell.
  • The bottom surface of the leaker device abuts either the top surface of the bottom electrode or the top surface of the support pillar.
  • The top surface of the leaker device abuts the bottom surface of a conductive plate.
  • The memory device also includes the conductive plate.

Potential applications of this technology:

  • Memory devices with improved performance and reliability.
  • Enhanced data storage capabilities in electronic devices.
  • Increased efficiency in data processing and retrieval.

Problems solved by this technology:

  • Addressing the need for memory devices with better performance and reliability.
  • Overcoming limitations in data storage capacity and speed.
  • Resolving issues related to data loss or corruption.

Benefits of this technology:

  • Improved memory cell design for enhanced functionality.
  • Increased data storage capacity and faster data access.
  • Enhanced reliability and durability of memory devices.


Original Abstract Submitted

Implementations described herein relate to various structures, integrated assemblies, and memory devices. In some implementations, a memory device includes multiple memory cells. Each memory cell may include a bottom electrode having an open top cylinder shape that contains a support pillar, may include a top electrode, may include an insulator that separates the top electrode from the bottom electrode, and may include a leaker device having an open top cylinder shape. A bottom surface of the leaker device may abut at least one of a top surface of the bottom electrode or a top surface of the support pillar. A top surface of the leaker device may abut a bottom surface of a conductive plate. The memory device may also include the conductive plate.

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