17805201. MICROELECTRONIC DEVICES, RELATED ELECTRONIC SYSTEMS, AND METHODS OF FORMING MICROELECTRONIC DEVICES simplified abstract (Micron Technology, Inc.)

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MICROELECTRONIC DEVICES, RELATED ELECTRONIC SYSTEMS, AND METHODS OF FORMING MICROELECTRONIC DEVICES

Organization Name

Micron Technology, Inc.

Inventor(s)

Fatma Arzum Simsek-ege of Boise ID (US)

Richard E. Fackenthal of Carmichael CA (US)

MICROELECTRONIC DEVICES, RELATED ELECTRONIC SYSTEMS, AND METHODS OF FORMING MICROELECTRONIC DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17805201 titled 'MICROELECTRONIC DEVICES, RELATED ELECTRONIC SYSTEMS, AND METHODS OF FORMING MICROELECTRONIC DEVICES

Simplified Explanation

The abstract describes a microelectronic device that consists of vertical stacks of memory cells, access devices, capacitors, and a conductive pillar structure. It also includes multiplexers, additional transistors, and global digit lines. The abstract mentions related electronic systems and methods.

  • The microelectronic device comprises vertical stacks of memory cells.
  • Each vertical stack of memory cells includes a vertical stack of access devices.
  • The vertical stack of access devices is horizontally neighboring a vertical stack of capacitors.
  • A conductive pillar structure vertically extends through the vertical stack of access devices.
  • The microelectronic device includes multiplexers and additional transistors that are vertically overlying the vertical stacks of memory cells.
  • Global digit lines are vertically overlying the multiplexer and the additional transistor.

Potential Applications

  • Memory devices in electronic devices such as smartphones, computers, and tablets.
  • Data storage systems in cloud computing and data centers.
  • High-performance computing systems.

Problems Solved

  • Efficient and compact memory storage.
  • Improved data access and retrieval speed.
  • Enhanced performance and reliability of electronic devices.

Benefits

  • Higher memory capacity in a smaller form factor.
  • Faster data processing and retrieval.
  • Improved overall performance and efficiency of electronic systems.


Original Abstract Submitted

A microelectronic device comprises vertical stacks of memory cells, each vertical stack of memory cells comprising a vertical stack of access devices, a vertical stack of capacitors horizontally neighboring the vertical stack of access devices, and a conductive pillar structure vertically extending through the vertical stack of access devices. The microelectronic device further comprises multiplexers and additional transistors vertically overlying the vertical stacks of memory cells, and global digit lines vertically overlying the multiplexer and the additional transistor. Related electronic systems and methods are also described.