17805167. MICROELECTRONIC DEVICES INCLUDING IMPLANT REGIONS, AND RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS simplified abstract (Micron Technology, Inc.)
MICROELECTRONIC DEVICES INCLUDING IMPLANT REGIONS, AND RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS
Organization Name
Inventor(s)
Zhiqiang Teo of Singapore (SG)
Martin J. Barclay of Middleton ID (US)
John D. Hopking of Meridian ID (US)
Jordan D. Greenlee of Boise ID (US)
MICROELECTRONIC DEVICES INCLUDING IMPLANT REGIONS, AND RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17805167 titled 'MICROELECTRONIC DEVICES INCLUDING IMPLANT REGIONS, AND RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS
Simplified Explanation
The patent application describes a microelectronic device that includes various structures and materials to improve its performance and functionality.
- The device includes lateral contact structures made of conductive material, which are positioned over a source structure.
- A cap material is placed over the lateral contact structures and contains implant regions with implant regions.
- A stack structure is then added on top of the cap material, consisting of alternating layers of insulative and conductive structures arranged in tiers.
- Pillars are vertically extended through the stack structure and into the source structure, with each pillar having semiconductive channel material in contact with the lateral contact structures.
- The device also includes filled slot structures that extend vertically through the stack structure and cap material, positioned within the implant regions of the cap material.
Potential applications of this technology:
- Memory devices: The microelectronic device described in the patent application can be used in memory devices to improve their performance and functionality.
- Electronic systems: The technology can be applied in various electronic systems, such as computers, smartphones, and IoT devices, to enhance their capabilities.
Problems solved by this technology:
- Improved performance: The use of lateral contact structures, cap material with implant regions, and stack structure helps to enhance the performance of the microelectronic device.
- Increased functionality: The addition of filled slot structures within the implant regions allows for additional functionality and improved integration within electronic systems.
Benefits of this technology:
- Enhanced performance: The various structures and materials used in the microelectronic device contribute to improved performance, such as faster data processing and higher efficiency.
- Increased functionality: The addition of filled slot structures provides additional functionality and flexibility in the design and integration of the device into electronic systems.
- Improved integration: The design of the device allows for better integration within electronic systems, enabling seamless connectivity and compatibility.
Original Abstract Submitted
A microelectronic device comprises lateral contact structures overlying a source structure and comprising conductive material, a cap material overlying the lateral contact structures and comprising implant regions therein, a stack structure overlying the cap material and comprising a vertically alternating sequence of insulative structures and conductive structures arranged in tiers, and pillars vertically extending through the stack structure and into the source structure. The pillars individually comprise semiconductive channel material in physical contact with the lateral contact structures. The microelectronic device comprises filled slot structures vertically extending at least through the stack structure and the cap material. The filled slot structures are positioned within horizontal areas of the implant regions of the cap material. Related memory devices, electronic systems, and methods of forming the microelectronic devices are also described.
