17805009. METHODS OF FORMING MICROELECTRONIC DEVICES INCLUDING SUPPORT CONTACT STRUCTURES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
Contents
- 1 METHODS OF FORMING MICROELECTRONIC DEVICES INCLUDING SUPPORT CONTACT STRUCTURES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHODS OF FORMING MICROELECTRONIC DEVICES INCLUDING SUPPORT CONTACT STRUCTURES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Original Abstract Submitted
METHODS OF FORMING MICROELECTRONIC DEVICES INCLUDING SUPPORT CONTACT STRUCTURES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS
Organization Name
Inventor(s)
Sandra L. Tagg of Boise ID (US)
METHODS OF FORMING MICROELECTRONIC DEVICES INCLUDING SUPPORT CONTACT STRUCTURES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17805009 titled 'METHODS OF FORMING MICROELECTRONIC DEVICES INCLUDING SUPPORT CONTACT STRUCTURES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS
Simplified Explanation
Methods of forming a microelectronic device are described in this patent application. The process involves creating a preliminary stack structure with blocks separated by slots. Each block consists of tiers made of insulative and sacrificial materials, with live contact openings and support contact openings extending through the tiers.
Here are the key points of the patent/innovation:
- Formation of a preliminary stack structure with blocks and slots.
- Tiers within each block consisting of insulative and sacrificial materials.
- Live contact openings and support contact openings extending through the tiers.
- Formation of first and second liners over the preliminary stack structure.
- Removal of portions of the liners within the support contact openings.
- Formation of fill material within the slots and contact openings to create sacrificial slot structures, sacrificial contact structures, and support contact structures.
- Replacement of sacrificial contact structures with conductive contact structures.
- Removal of sacrificial slot structures.
- Replacement of sacrificial material in the tiers with conductive material.
Potential applications of this technology:
- Microelectronic devices manufacturing.
- Integrated circuits fabrication.
- Semiconductor device production.
Problems solved by this technology:
- Provides a method for forming microelectronic devices with improved contact structures.
- Enables the creation of sacrificial slot structures for precise device fabrication.
- Allows for the replacement of sacrificial materials with conductive materials.
Benefits of this technology:
- Enhanced performance and functionality of microelectronic devices.
- Improved electrical contact between different layers of the device.
- Enables the creation of complex and precise structures within the device.
- Facilitates the production of high-quality integrated circuits.
Original Abstract Submitted
Methods of forming a microelectronic device includes forming a preliminary stack structure including blocks separated by slots, each block including: tiers each including insulative material and sacrificial material; and live contact openings and support contact openings extending completely through the tiers. A first liner and a second liner are formed over surfaces of the preliminary stack structure. Portions of the second liner and the first liner within the support contact openings are removed without removing additional portions of the second liner and the first liner within the slots and the live contact openings. Fill material is formed within the slots, the live contact openings, and the support contact openings to form sacrificial slot structures, sacrificial contact structures, and support contact structures. The sacrificial contact structures are replaced with conductive contact structures. The sacrificial slot structures are removed, and the sacrificial material of the tiers is replaced with conductive material.
