US Patent Application 18449360. SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE DESIGN METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract
SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE DESIGN METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Organization Name
Inventor(s)
Yoshizo Osumi of Kyoto-shi (JP)
Taro Nishioka of Kyoto-shi (JP)
Tomohira Kikuchi of Kyoto-shi (JP)
Hiroaki Matsubara of Kyoto-shi (JP)
SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE DESIGN METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18449360 titled 'SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE DESIGN METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Simplified Explanation
The patent application describes a semiconductor device that includes multiple semiconductor elements, a conductive support, a third semiconductor element, and a sealing resin. The conductive support has two leads spaced apart in a certain direction. The first semiconductor element is supported by the first lead, the second semiconductor element is supported by the second lead, and the third semiconductor element insulates the first and second elements. The sealing resin covers part of the conductive support. The distance between the leads is greater than a calculated value based on the expected insulation life, material constants, and voltage.
- The patent application is for a semiconductor device with improved insulation properties.
- The device includes multiple semiconductor elements supported by a conductive support.
- A third semiconductor element is used to insulate the other elements.
- The conductive support has two leads spaced apart in a specific direction.
- The sealing resin covers part of the conductive support.
- The distance between the leads is determined based on the expected insulation life, material constants, and voltage.
Original Abstract Submitted
A semiconductor device includes first and second semiconductor elements, a conductive support, a third semiconductor element and a sealing resin. The conductive support includes first and second leads spaced apart in a first direction. The first semiconductor element is supported by the first lead. The second semiconductor element is supported by the second lead. The third semiconductor element, supported by the conductive support, insulates the first semiconductor element and the second semiconductor element. The sealing resin covers a part of the conductive support. A distance d1 between the first lead and the second lead in the first direction is greater than distance d0 given by Equation below. In Equation below, Y is the number of years of insulation life (years) expected for the semiconductor device, A and B are constants determined by a material of the sealing resin, and X is a voltage (kVrms).
