US Patent Application 18447134. ETCH METHOD FOR INTERCONNECT STRUCTURE simplified abstract

ETCH METHOD FOR INTERCONNECT STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Chun-Cheng Chou of Taichung (TW)]]

[[Category:Yu-Fang Huang of Hsinchu (TW)]]

[[Category:Kuo-Ju Chen of Taichung (TW)]]

[[Category:Ying-Liang Chuang of Zhubei (TW)]]

[[Category:Chun-Neng Lin of Hsinchu (TW)]]

[[Category:Ming-Hsi Yeh of Hsinchu (TW)]]

[[Category:Kuo-Bin Huang of Jhubei (TW)]]

ETCH METHOD FOR INTERCONNECT STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18447134 titled 'ETCH METHOD FOR INTERCONNECT STRUCTURE

Simplified Explanation

The patent application describes a method for creating a middle-of-line interconnect structure in a semiconductor device.

• The method involves forming a region of varied composition near the surface of a first interconnect structure, which is made of a first metal and a second element.
• A recess is then formed within the region of varied composition, extending both laterally along the surface and vertically below the surface.
• The recess is filled with a second metal to create a second interconnect structure that makes contact with the first interconnect structure.

Original Abstract Submitted

A method for making a middle-of-line interconnect structure in a semiconductor device includes forming, near a surface of a first interconnect structure comprised of a first metal, a region of varied composition including the first metal and a second element. The method further includes forming a recess within the region of varied composition. The recess laterally extends a first distance along the surface and vertically extends a second distance below the first surface. The method further includes filling the recess with a second metal to form a second interconnect structure that contacts the first interconnect structure.