US Patent Application 18366733. Semiconductor Device Including a Layer Between a Source/Drain Region and a Substrate simplified abstract
Semiconductor Device Including a Layer Between a Source/Drain Region and a Substrate
Organization Name
Taiwan Semiconductor Manufacturing Company Limited
Inventor(s)
Semiconductor Device Including a Layer Between a Source/Drain Region and a Substrate - A simplified explanation of the abstract
This abstract first appeared for US patent application 18366733 titled 'Semiconductor Device Including a Layer Between a Source/Drain Region and a Substrate
Simplified Explanation
- The patent application describes devices and methods that eliminate the need for a read assist circuit. - A semiconductor device is described, which includes a source region and a drain region formed above a substrate. - A buried insulator (BI) layer is formed beneath either the source region or the drain region. - A first nano-sheet is formed horizontally between the source region and the drain region and vertically above the BI layer. - The BI layer reduces current flow through the first nano-sheet.
Original Abstract Submitted
Devices and methods are described herein that obviate the need for a read assist circuit. In one example, a semiconductor device includes a source region and a drain region formed above a substrate. A buried insulator (BI) layer is formed beneath either the source region or the drain region. A first nano-sheet is formed (i) horizontally between the source region and the drain region and (ii) vertically above the BI layer. The BI layer reduces current flow through the first nano-sheet.
