US Patent Application 18366210. SOURCE/DRAIN SPACER WITH AIR GAP IN SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME simplified abstract

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SOURCE/DRAIN SPACER WITH AIR GAP IN SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Ko-Cheng Liu of Hsinchu City (TW)]]

[[Category:Ming-Lung Cheng of Kaohsiung County (TW)]]

[[Category:Chang-Miao Liu of Hsinchu City (TW)]]

SOURCE/DRAIN SPACER WITH AIR GAP IN SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18366210 titled 'SOURCE/DRAIN SPACER WITH AIR GAP IN SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

Simplified Explanation

The patent application describes a semiconductor structure that includes several components and features. Here is a simplified explanation of the abstract:

  • The semiconductor structure consists of a semiconductor fin that sticks out from a substrate.
  • Adjacent and parallel to the semiconductor fin, there is a dielectric fin.
  • Inside the semiconductor fin, there is an epitaxial source/drain (S/D) feature.
  • A dielectric layer is placed between the sidewall of the epitaxial S/D feature and the sidewall of the dielectric fin.
  • Within the dielectric layer, there is an air gap.

Bullet points explaining the patent/innovation:

  • The semiconductor structure has a protruding semiconductor fin, which allows for better performance and efficiency.
  • The presence of the dielectric fin alongside the semiconductor fin helps in reducing interference and improving overall functionality.
  • The epitaxial S/D feature within the semiconductor fin enhances the performance of the semiconductor structure.
  • The dielectric layer between the epitaxial S/D feature and the dielectric fin provides insulation and protection.
  • The air gap within the dielectric layer further enhances the performance and efficiency of the semiconductor structure.


Original Abstract Submitted

A semiconductor structure includes a semiconductor fin protruding from a substrate, a dielectric fin disposed adjacent and substantially parallel to the semiconductor fin, an epitaxial source/drain (S/D) feature disposed in the semiconductor fin, a dielectric layer disposed between a sidewall of the epitaxial S/D feature and a sidewall of the dielectric fin, and an air gap disposed in the dielectric layer.

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