US Patent Application 18363819. METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND MEMORY simplified abstract
METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND MEMORY
Organization Name
CHANGXIN MEMORY TECHNOLOGIES, INC.
Inventor(s)
METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND MEMORY - A simplified explanation of the abstract
This abstract first appeared for US patent application 18363819 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND MEMORY
Simplified Explanation
- The present disclosure describes a method of manufacturing a semiconductor structure and a memory. - The semiconductor structure includes a base with columnar basal bodies and an isolation layer filled around them. - Word line trenches are present in the base, extending parallel to the surface of the base. - First trench portions are formed where the word line trenches intersect with the columnar basal bodies. - In the first trench portions, a first word line conductive layer, a second word line conductive layer, and an insulating layer are arranged sequentially from bottom to top. - Second trench portions are formed where the word line trenches intersect with the isolation layer. - In the second trench portions, the second word line conductive layer and the insulating layer are arranged sequentially from bottom to top.
Original Abstract Submitted
The present disclosure provides a method of manufacturing a semiconductor structure, a semiconductor structure, and a memory. The semiconductor structure includes a base. The base includes columnar basal bodies and an isolation layer filled around the columnar basal bodies. Word line trenches are provided in the base and extend along a direction parallel to a surface of the base. First trench portions are formed at parts of the word line trenches intersecting with the columnar basal bodies, and a first word line conductive layer, a second word line conductive layer, and an insulating layer are sequentially arranged in the first trench portions from bottom to top. Second trench portions are formed at parts of the word line trenches intersecting with the isolation layer, and the second word line conductive layer and the insulating layer are sequentially arranged in the second trench portions from bottom to top.
