US Patent Application 18357060. IMAGING ELEMENT, STACKED-TYPE IMAGING ELEMENT, AND SOLID-STATE IMAGING APPARATUS simplified abstract
IMAGING ELEMENT, STACKED-TYPE IMAGING ELEMENT, AND SOLID-STATE IMAGING APPARATUS
Organization Name
SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Inventor(s)
FUMIHIKO Koga of KANAGAWA (JP)
IMAGING ELEMENT, STACKED-TYPE IMAGING ELEMENT, AND SOLID-STATE IMAGING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18357060 titled 'IMAGING ELEMENT, STACKED-TYPE IMAGING ELEMENT, AND SOLID-STATE IMAGING APPARATUS
Simplified Explanation
The patent application describes an imaging element with a photoelectric conversion unit.
- The photoelectric conversion unit includes a first electrode, a photoelectric conversion layer, and a second electrode.
- The unit also includes a charge storage electrode and a transfer control electrode, both separated from the first electrode by an insulating layer.
- The photoelectric conversion layer is located above the charge storage electrode via the insulating layer.
Original Abstract Submitted
There is provided an imaging element includes a photoelectric conversion unit that includes a first electrode, a photoelectric conversion layer, and a second electrode, in which the photoelectric conversion unit further includes a charge storage electrode that has an opposite region opposite to the first electrode via an insulating layer, and a transfer control electrode that is opposite to the first electrode and the charge storage electrode via the insulating layer, and the photoelectric conversion layer is disposed above at least the charge storage electrode via the insulating layer.
