US Patent Application 18247013. SEMICONDUCTOR MULTILAYER STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE simplified abstract
SEMICONDUCTOR MULTILAYER STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
Organization Name
Nippon Telegraph and Telephone Corporation
Inventor(s)
Hideaki Matsuzaki of Tokyo (JP)
SEMICONDUCTOR MULTILAYER STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18247013 titled 'SEMICONDUCTOR MULTILAYER STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a method for bonding a nitride semiconductor layer to a substrate using direct bonding technology. Here are the key points:
- The method involves growing a nitride semiconductor layer containing Ga in a specific direction on one substrate.
- The nitride semiconductor layer is then bonded to another substrate, with the surface of the nitride semiconductor layer facing the substrate.
- The bonding process utilizes a known direct bonding technology.
- The purpose of this method is to create a strong bond between the nitride semiconductor layer and the substrate.
- This technique can be used in the fabrication of various electronic devices that require a nitride semiconductor layer.
Original Abstract Submitted
After a nitride semiconductor layer is formed through crystal-growth of a nitride semiconductor containing Ga in a +c-axis direction on the other substrate, the other substrate on which the nitride semiconductor layer is formed is bonded to a substrate in a state where a surface on which the nitride semiconductor layer of the other substrate is formed is on the side of the substrate (a bonding step). This bonding is performed by bonding the surfaces to be bonded by a known direct bonding technology.
