US Patent Application 18217043. APPARATUS FOR CONDUCTING PLASMA SURFACE TREATMENT, BOARD TREATMENT SYSTEM HAVING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME simplified abstract
APPARATUS FOR CONDUCTING PLASMA SURFACE TREATMENT, BOARD TREATMENT SYSTEM HAVING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME
Organization Name
Inventor(s)
Boeun Jang of Hwaseong-si (KR)
Seokyeon Hwang of Yongin-si (KR)
Sangsoo Kim of Cheonan-si (KR)
Yongkwan Lee of Hwaseong-si (KR)
Jongho Lee of Hwaseong-si (KR)
Changkyu Choi of Yongin-si (KR)
APPARATUS FOR CONDUCTING PLASMA SURFACE TREATMENT, BOARD TREATMENT SYSTEM HAVING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME - A simplified explanation of the abstract
- This abstract for appeared for US patent application number 18217043 Titled 'APPARATUS FOR CONDUCTING PLASMA SURFACE TREATMENT, BOARD TREATMENT SYSTEM HAVING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME'
Simplified Explanation
The abstract describes a surface treatment apparatus and system. The apparatus includes a process chamber where surface treatment is conducted, a plasma generator positioned outside the chamber that generates process radicals in a plasma state for the treatment process. A supply duct connects the plasma generator to the chamber, and a heat exchanger on the duct cools down the temperature of the process radicals. A flow controller controls the flow of the process radicals out of the chamber through a discharge duct. The apparatus allows for plasma surface treatment of package structures with small mounting gaps without causing damage to the IC chip and board.
Original Abstract Submitted
A surface treatment apparatus and a surface treatment system having the same are disclosed. The surface treatment apparatus includes a process chamber in which the surface treatment process is conducted, a plasma generator for generating process radicals as a plasma state for the surface treatment process, the plasma generator being positioned outside of the process chamber and connected to the process chamber by a supply duct, a heat exchanger arranged on the supply duct and cooling down temperature of the process radicals passing through the supply duct and a flow controller controlling the process radicals to flow out of the process chamber. The flow controller is connected to a discharge duct through which the process radicals are discharged outside the process chamber. The plasma surface treatment process is conducted to the package structure having minute mounting gap without the damages to the IC chip and the board.
