US Patent Application 18201509. THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR MANUFACTURING THEREOF, AND DISPLAY APPARATUS COMPRISING THE THIN FILM TRANSISTOR SUBSTRATE simplified abstract
THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR MANUFACTURING THEREOF, AND DISPLAY APPARATUS COMPRISING THE THIN FILM TRANSISTOR SUBSTRATE
Organization Name
Inventor(s)
JaeHyun Kim of Gyeonggi-do (KR)
THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR MANUFACTURING THEREOF, AND DISPLAY APPARATUS COMPRISING THE THIN FILM TRANSISTOR SUBSTRATE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18201509 titled 'THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR MANUFACTURING THEREOF, AND DISPLAY APPARATUS COMPRISING THE THIN FILM TRANSISTOR SUBSTRATE
Simplified Explanation
The patent application describes a thin film transistor substrate with two thin film transistors on a base substrate.
- The first thin film transistor has a first active layer with a channel part that overlaps with a first gate electrode and a first conductive part penetration region.
- The second thin film transistor has a second active layer with a channel part that overlaps with a second gate electrode and a second conductive part penetration region.
- The length of the first conductive part penetration region is longer than the second conductive part penetration region.
Original Abstract Submitted
A thin film transistor substrate includes a first thin film transistor and a second thin film transistor on the base substrate, the first active layer of the first thin film transistor includes a first channel part overlapping with a first gate electrode and a first conductive part penetration region, the second active layer of the second thin film transistor includes the second channel part overlapping with a second gate electrode, a second conductive part penetration region, and a length of the first conductive part penetration region is longer than the second conductive part penetration region.
