US Patent Application 17829154. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES simplified abstract

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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Po-Han Lin of Hsinchu City (TW)]]

[[Category:Huan-Chieh Chang of Hsinchu (TW)]]

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17829154 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES

Simplified Explanation

The patent application describes a method of manufacturing a semiconductor device.

  • A target layer is formed over a substrate.
  • A mask layer with an opening is formed over the target layer.
  • The opening is enlarged in one direction without enlarging it in the other direction by a directional process.
  • The target layer is patterned to create a hole corresponding to the opening.


Original Abstract Submitted

In a method of manufacturing a semiconductor device, a target layer to be patterned is formed over a substrate, a mask layer having an opening is formed over the target layer, the opening is enlarged in a first direction without enlarging the opening in a second direction crossing the first direction by a directional process, where the first and second directions are parallel to an upper surface of the substrate, and the target layer is patterned to form a hole corresponding to the opening.

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