US Patent Application 17824915. EPITAXIAL SOURCE/DRAIN STRUCTURE WITH HIGH DOPANT CONCENTRATION simplified abstract

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EPITAXIAL SOURCE/DRAIN STRUCTURE WITH HIGH DOPANT CONCENTRATION

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Chih Sheng Huang of New Taipei City (TW)]]

[[Category:Ming-Hua Yu of Hsinchu (TW)]]

[[Category:Yee-Chia Yeo of Hsinchu (TW)]]

EPITAXIAL SOURCE/DRAIN STRUCTURE WITH HIGH DOPANT CONCENTRATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 17824915 titled 'EPITAXIAL SOURCE/DRAIN STRUCTURE WITH HIGH DOPANT CONCENTRATION

Simplified Explanation

The patent application describes a semiconductor device with multiple nanostructures, a gate dielectric layer, a gate electrode, and a source/drain region.

  • The source/drain region has a unique structure with a polygonal-shaped upper portion and a column-like lower portion.
  • The polygonal-shaped upper portion has multiple facets, each with a specific crystallographic orientation.
  • The corner regions of the polygonal-shaped upper portion are adjacent to the intersection of two facets with a specific crystallographic orientation.
  • The corner regions have a higher dopant concentration compared to the epitaxial body region in contact with them.
  • The invention aims to improve the performance and efficiency of semiconductor devices by utilizing this specific structure and dopant concentration gradient in the source/drain region.


Original Abstract Submitted

A semiconductor device includes a plurality of nanostructures, a gate dielectric layer disposed on each nanostructure of the plurality of nanostructures, a gate electrode disposed on the gate dielectric layer and on the plurality of nanostructures, and a source/drain region adjacent to the nanostructures. The source/drain region includes an epitaxial structure including a polygonal-shaped upper portion and a column-like lower portion, wherein the polygonal-shaped upper portion has multiple facets, and each of the facets characterized by a () crystallographic orientation. The polygonal-shaped upper portion includes corner regions adjacent an intersection of two facets with a () crystallographic orientation and an epitaxial body region in contact with the corner regions. The corner regions are characterized by a first dopant concentration and the epitaxial body region is characterized by a second dopant concentration, and the first dopant concentration is higher than the second dopant concentration.

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