Tokyo electron limited (20240339309). Advanced OES Characterization simplified abstract
Contents
Advanced OES Characterization
Organization Name
Inventor(s)
Sergey Voronin of Albany NY (US)
Francisco Machuca of Fremont CA (US)
Blaze Messer of Albany NY (US)
Mihail Mihaylov of Fremont CA (US)
Ashawaraya Shalini of Fremont CA (US)
Advanced OES Characterization - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240339309 titled 'Advanced OES Characterization
The patent application describes a processing system with a processing chamber, vacuum pumps, exhaust gas line, plasma power supply, and an optical emission spectroscopy (OES) measurement assembly.
- The processing system includes a processing chamber for holding a substrate to be processed.
- It has a first vacuum pump and a second vacuum pump downstream from the first pump.
- An exhaust gas line connects the process chamber, the first vacuum pump, and the second vacuum pump.
- A plasma power supply with a first RF power source generates a plasma from exhaust gas between the vacuum pumps.
- An OES measurement assembly with an OES detector measures OES signals from the plasma.
Potential Applications: - Semiconductor manufacturing - Thin film deposition processes - Surface modification of materials
Problems Solved: - Monitoring and controlling plasma processes - Enhancing process efficiency and accuracy - Improving product quality and consistency
Benefits: - Real-time monitoring of plasma parameters - Enhanced process control and optimization - Increased productivity and yield in manufacturing processes
Commercial Applications: Title: Advanced Plasma Processing System for Semiconductor Manufacturing This technology can be used in semiconductor fabrication facilities to improve process control and product quality. It can also find applications in other industries requiring precise plasma processing.
Questions about the technology: 1. How does the OES measurement assembly contribute to process optimization?
- The OES detector provides real-time data on plasma composition, helping operators adjust parameters for optimal processing.
2. What are the advantages of having two vacuum pumps in the system?
- The dual pump configuration enhances gas evacuation efficiency, leading to better plasma generation and control.
Original Abstract Submitted
a processing system that includes: a processing chamber configured to hold a substrate to be processed; a first vacuum pump; a second vacuum pump disposed downstream from the first vacuum pump; an exhaust gas line connecting the process chamber and the first vacuum pump, and the first vacuum pump and the second vacuum pump; a plasma power supply including a first rf power source configured to generate a plasma from a portion of an exhaust gas between the first and second vacuum pumps; and an optical emission spectroscopy (oes) measurement assembly including an oes detector configured to measure oes signals from the plasma.
- Tokyo electron limited
- Sergey Voronin of Albany NY (US)
- Francisco Machuca of Fremont CA (US)
- Blaze Messer of Albany NY (US)
- Yan Chen of Fremont CA (US)
- Ying Zhu of Fremont CA (US)
- Mihail Mihaylov of Fremont CA (US)
- Joel Ng of Fremont CA (US)
- Ashawaraya Shalini of Fremont CA (US)
- Da Song of Albany NY (US)
- Akiteru Ko of Albany NY (US)
- H01J37/32
- H01J37/18
- CPC H01J37/32972