Tokyo electron limited (20240295022). PROCESSING METHOD AND PROCESSING APPARATUS simplified abstract

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PROCESSING METHOD AND PROCESSING APPARATUS

Organization Name

tokyo electron limited

Inventor(s)

Hiroki Murakami of Yamanashi (JP)

PROCESSING METHOD AND PROCESSING APPARATUS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240295022 titled 'PROCESSING METHOD AND PROCESSING APPARATUS

The abstract of the patent application describes a processing method that involves introducing a halogen-containing gas into a process chamber to eliminate a metal oxide film present in the chamber.

  • Halogen-containing gas is supplied into the process chamber.
  • Metal oxide film is removed from the process chamber.
  • The method aims to improve the efficiency and effectiveness of the processing operation.
  • This innovation can be applied in various industries such as semiconductor manufacturing, electronics, and materials science.
  • The technology addresses the challenge of metal oxide film buildup in process chambers, which can negatively impact the quality of the final product.
  • By removing the metal oxide film, the method ensures better performance and reliability of the processing equipment.

Potential Applications: - Semiconductor manufacturing - Electronics industry - Materials science research

Problems Solved: - Buildup of metal oxide film in process chambers - Degradation of processing equipment performance - Quality issues in final products

Benefits: - Improved processing efficiency - Enhanced product quality - Extended equipment lifespan

Commercial Applications: - Semiconductor fabrication facilities - Electronics manufacturing plants - Research laboratories in materials science

Questions about the technology: 1. How does the presence of metal oxide film affect the processing operation? 2. What are the specific advantages of using a halogen-containing gas in this method?


Original Abstract Submitted

a processing method includes supplying a halogen-containing gas into a process chamber and removing a metal oxide film in the process chamber.

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