Tokyo electron limited (20240249921). IN-SITU FOCUS RING COATING simplified abstract
Contents
IN-SITU FOCUS RING COATING
Organization Name
Inventor(s)
Minjoon Park of Albany NY (US)
IN-SITU FOCUS RING COATING - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240249921 titled 'IN-SITU FOCUS RING COATING
The method described in the patent application involves etching a substrate using a plasma etch chamber with a focus ring that has a surface layer containing a refractory metal.
- Loading the substrate into a plasma etch chamber with a focus ring.
- Flowing a process gas with fluorine and carbon into the chamber.
- Coating a carbide layer over the surface layer of the focus ring by exposing it to a plasma.
- Etching the substrate by exposing it to the plasma.
Potential Applications: - Semiconductor manufacturing - Microelectronics industry - Nanotechnology research
Problems Solved: - Improving etching precision - Enhancing substrate processing efficiency
Benefits: - Increased etching accuracy - Enhanced substrate surface quality - Reduced process time and cost
Commercial Applications: - Advanced semiconductor fabrication - High-tech manufacturing processes
Questions about the technology: 1. How does the carbide layer improve the etching process? 2. What specific types of substrates can be etched using this method?
Frequently Updated Research: - Ongoing studies on optimizing plasma etching techniques for various applications.
Original Abstract Submitted
a method of etching a substrate includes loading the substrate into a plasma etch chamber, the plasma etch chamber including a focus ring surrounding the substrate, the focus ring including a bulk material and a surface layer, the surface layer including a refractory metal; flowing a process gas including fluorine and carbon into the plasma etch chamber; coating a carbide layer over the surface layer of the focus ring, the coating including exposing the focus ring to a plasma generated from the process gas in the plasma etch chamber, the carbide layer including a carbide of the refractory metal; and etching the substrate, the etching including exposing the substrate to the plasma.
