Tokyo electron limited (20240240307). METHOD OF FORMING SILICON NITRIDE FILM simplified abstract
Contents
- 1 METHOD OF FORMING SILICON NITRIDE FILM
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF FORMING SILICON NITRIDE FILM - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Silicon Nitride Film Formation
- 1.13 Original Abstract Submitted
METHOD OF FORMING SILICON NITRIDE FILM
Organization Name
Inventor(s)
Takafumi Nogami of Nirasaki City (JP)
Yoshiki Nakano of Nirasaki City (JP)
METHOD OF FORMING SILICON NITRIDE FILM - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240240307 titled 'METHOD OF FORMING SILICON NITRIDE FILM
Simplified Explanation
The method described in the patent application involves forming a silicon nitride film on a substrate with a graphene film by supplying nitrogen-containing and silicon precursor gases into a processing container, generating plasma, and exposing the substrate to the plasma.
- The method involves preparing a substrate with a graphene film.
- Nitrogen-containing gas is supplied into the processing container.
- A silicon precursor gas is then supplied into the container.
- Plasma is generated by supplying radio-frequency power.
- The silicon nitride film is formed on the graphene film by exposing the substrate to the plasma.
Key Features and Innovation
- Formation of a silicon nitride film on a substrate with a graphene film.
- Use of nitrogen-containing and silicon precursor gases.
- Generation of plasma for film formation.
Potential Applications
The technology can be used in semiconductor manufacturing, thin film deposition, and surface coating applications.
Problems Solved
The method provides a way to deposit a silicon nitride film on a graphene-coated substrate efficiently and effectively.
Benefits
- Improved film deposition process.
- Enhanced substrate properties.
- Increased efficiency in manufacturing processes.
Commercial Applications
- Semiconductor industry for device fabrication.
- Electronics industry for surface coating applications.
Prior Art
Prior research may include methods for depositing silicon nitride films on various substrates using different techniques.
Frequently Updated Research
Ongoing research may focus on optimizing the deposition process, exploring new precursor gases, and improving film properties.
Questions about Silicon Nitride Film Formation
How does the presence of a graphene film impact the formation of the silicon nitride film?
The graphene film on the substrate may influence the nucleation and growth of the silicon nitride film, potentially affecting its properties and adhesion.
What are the potential challenges in scaling up this method for industrial applications?
Scaling up the process may require optimizing gas flow rates, plasma parameters, and substrate handling to ensure uniform film deposition and high throughput.
Original Abstract Submitted
a method of forming a silicon nitride film includes: preparing a substrate in a processing container, the substrate having a graphene film on a surface of the substrate; supplying a nitrogen-containing gas into the processing container; supplying a si precursor gas into the processing container after the nitrogen-containing gas is supplied and after a pressure control inside the processing container is stabilized; generating plasma within the processing container by supplying radio-frequency power for plasma generation after the si precursor gas is supplied and before the pressure control inside the processing container is stabilized; and forming the silicon nitride film on the graphene film by exposing the substrate to the plasma.
