Tokyo Electron Limited patent applications on September 5th, 2024
Patent Applications by Tokyo Electron Limited on September 5th, 2024
Tokyo Electron Limited: 12 patent applications
Tokyo Electron Limited has applied for patents in the areas of C23C16/455 (4), H01J37/32 (3), C23C16/44 (2), C23C16/40 (2), H01L21/02 (2) C23C16/14 (1), C23C16/4405 (1), C23C16/4412 (1), C23C16/45548 (1), C23C16/4584 (1)
With keywords such as: processing, substrate, chamber, gas, power, position, configured, electrode, apparatus, and upper in patent application abstracts.
Patent Applications by Tokyo Electron Limited
Inventor(s): Katsumasa YAMAGUCHI of Boise ID (US) for tokyo electron limited, Shigeru NAKAJIMA of Nirasaki City (JP) for tokyo electron limited
IPC Code(s): C23C16/14, C23C16/02, C23C16/04, C23C16/455, C23C16/52
CPC Code(s): C23C16/14
Abstract: a method of embedding tungsten into a recess formed on a substrate, the method includes forming a lower tungsten layer by supplying a fluorine-free tungsten precursor gas containing a tungsten compound that does not contain fluorine atoms to a top surface of an aluminum oxide layer formed inside the recess, and embedding tungsten into the recess by supplying a tungsten precursor gas containing a tungsten compound that contains fluorine atoms to a top surface of the lower tungsten layer to form a main tungsten layer.
20240295022. PROCESSING METHOD AND PROCESSING APPARATUS_simplified_abstract_(tokyo electron limited)
Inventor(s): Hiroki MURAKAMI of Yamanashi (JP) for tokyo electron limited
IPC Code(s): C23C16/44, C23C16/40, H01L21/02
CPC Code(s): C23C16/4405
Abstract: a processing method includes supplying a halogen-containing gas into a process chamber and removing a metal oxide film in the process chamber.
20240295023. SUBSTRATE PROCESSING APPARATUS_simplified_abstract_(tokyo electron limited)
Inventor(s): Makoto TAKAHASHI of Iwate (JP) for tokyo electron limited
IPC Code(s): C23C16/44, C23C16/455
CPC Code(s): C23C16/4412
Abstract: a substrate processing apparatus includes: a processing container capable of accommodating a substrate holder that holds substrates; a gas exhaust chamber provided in a side wall of the processing container, an exhaust-side pipe extending horizontally from the gas exhaust chamber, and an ejector detachably disposed spanning through the gas exhaust chamber and the exhaust-side pipe.
20240295024. SUBSTRATE PROCESSING APPARATUS_simplified_abstract_(tokyo electron limited)
Inventor(s): Makoto TAKAHASHI of Iwate (JP) for tokyo electron limited, Masato KADOBE of Tokyo (JP) for tokyo electron limited, Tatsuya YAMAGUCHI of Tokyo (JP) for tokyo electron limited
IPC Code(s): C23C16/455, C23C16/48
CPC Code(s): C23C16/45548
Abstract: a substrate processing apparatus includes: a processing container capable of accommodating a substrate holder that holds substrates; a gas supply chamber provided in a side wall of the processing container, a supply-side pipe extending horizontally from the gas supply chamber, and an injector detachably disposed spanning through the gas supply chamber and the supply-side pipe.
20240295027. SUBSTRATE PROCESSING APPARATUS_simplified_abstract_(tokyo electron limited)
Inventor(s): Junnosuke TAGUCHI of Iwate (JP) for tokyo electron limited, Yasushi TAKEUCHI of Iwate (JP) for tokyo electron limited, Manabu HONMA of Iwate (JP) for tokyo electron limited, Ibuki HAYASHI of Iwate (JP) for tokyo electron limited
IPC Code(s): C23C16/458
CPC Code(s): C23C16/4584
Abstract: a substrate processing apparatus includes a vacuum chamber; a rotary table rotatably provided in the vacuum chamber; and a stage configured to rotate together with the rotary table. the rotary table has an opening provided at a position spaced apart from a rotation center of the rotary table. an inner surface of the opening is continuous with an upper surface and a lower surface of the rotary table. the stage is spaced apart from the inner surface of the opening by a clearance.
Inventor(s): Hiroyuki Fujii of Koshi City, Kumamoto (JP) for tokyo electron limited, Soichiro Okada of Koshi City, Kumamoto (JP) for tokyo electron limited, Yasuyuki Ido of Koshi City, Kumamoto (JP) for tokyo electron limited, Makoto Muramatsu of Koshi City, Kumamoto (JP) for tokyo electron limited, Keisuke Yoshida of Koshi City, Kumamoto (JP) for tokyo electron limited, Nanoka Miyahara of Koshi City, Kumamoto (JP) for tokyo electron limited
IPC Code(s): G03F7/16, H01L21/027
CPC Code(s): G03F7/162
Abstract: a substrate processing method includes forming a silicon carbide film on a spin on carbon film formed on a substrate; and forming a chemically amplified resist film for euv on the silicon carbide film.
Inventor(s): Taro IKEDA of Nirasaki City (JP) for tokyo electron limited, Yuki OSADA of Nirasaki City (JP) for tokyo electron limited, Hiroyuki MIYASHITA of Nirasaki City (JP) for tokyo electron limited
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32183
Abstract: a distributor for distributing electromagnetic waves to a plurality of output terminals, the distributor includes: a power supply terminal configured to be electrically connected to a radio-frequency power source configured to be capable of varying frequency; and a plurality of filters provided respectively at the plurality of output terminals to which the electromagnetic waves input to the power supply terminal are distributed. the plurality of filters is configured to have different frequency characteristics.
20240297020. PLASMA PROCESSING APPARATUS_simplified_abstract_(tokyo electron limited)
Inventor(s): Taro IKEDA of Nirasaki City (JP) for tokyo electron limited, Yuki OSADA of Nirasaki City (JP) for tokyo electron limited, Hiroyuki MIYASHITA of Nirasaki City (JP) for tokyo electron limited
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32256
Abstract: a plasma processing apparatus includes: a processing container; a resonator configured to resonate electromagnetic waves to be supplied; a slot antenna connected to the resonator; and a transmission window configured to transmit the electromagnetic waves radiated from the slot antenna and supply the electromagnetic waves into the processing container, wherein the resonator includes: an input port including an inner shaft and an outer cylinder; an output port including an inner shaft and an outer cylinder; a power supply fin connecting the inner shaft of the input port and the inner shaft of the output port and provided in the resonator; and a ground fin connected to the outer cylinder of the input port and the outer cylinder of the output port at a same potential and provided to protrude within the resonator so as to be inserted between fins of the power supply fin.
Inventor(s): Kota SENO of Miyagi (JP) for tokyo electron limited, Fumiaki ARIYOSHI of Miyagi (JP) for tokyo electron limited
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32605
Abstract: a plasma processing system includes a plasma processing apparatus and a transfer device. the plasma processing apparatus includes: a plasma processing chamber; a substrate support disposed inside the plasma processing chamber and having a lower electrode; an upper electrode assembly disposed above the substrate support, and having an electrode support and a replaceable upper electrode plate disposed below the electrode support; and a lifter configured to move the replaceable upper electrode plate vertically between an upper position and a lower position inside the plasma processing chamber, and configured to fix the replaceable upper electrode plate to the electrode support when the replaceable upper electrode plate is in the upper position. the transfer device includes: a transfer chamber; and a transfer robot disposed inside the transfer chamber, and configured to transfer the replaceable upper electrode plate between the lower position inside the plasma processing chamber and the transfer chamber.
Inventor(s): Naoki MATSUMOTO of Miyagi (JP) for tokyo electron limited, Shinya TAMONOKI of Miyagi (JP) for tokyo electron limited, Koichi NAGAMI of Miyagi (JP) for tokyo electron limited, Shinya ISHIKAWA of Miyagi (JP) for tokyo electron limited, Naoki FUJIWARA of Miyagi (JP) for tokyo electron limited, Naoki MIHARA of Miyagi (JP) for tokyo electron limited
IPC Code(s): H01L21/67, H01L21/677, H01L21/687
CPC Code(s): H01L21/67115
Abstract: there is a substrate processing apparatus for processing a substrate, comprising: a power receiver including a power reception coil to which power is transmitted in a non-contact manner from a power transmission coil located outside the substrate processing apparatus, wherein the substrate processing apparatus is configured to supply power to at least one unit or member that uses power from the power receiver.
Inventor(s): Ryoya TOMINAGA of Iwate (JP) for tokyo electron limited, Akashi FUJIO of Iwate (JP) for tokyo electron limited, Masami DODO of Iwate (JP) for tokyo electron limited, Gaku WATANABE of Iwate (JP) for tokyo electron limited, Hiroyuki WADA of Yamanashi (JP) for tokyo electron limited
IPC Code(s): H01L21/68, H01L21/687
CPC Code(s): H01L21/681
Abstract: a substrate processing apparatus includes a vacuum container, a rotary table, a stage, a lifter, and a controller that controls an operation of the lifter. the controller automatically sets a control position in the operation of the lifter. the controller, in (a), repeatedly raises the lifter by a first pitch and then determines whether or not the lifter has come into contact with a substrate, thereby bring the lifter to come into contact with the substrate to set a next position. the controller, in (b), repeatedly raises the lifter from the next position by a second pitch shorter than the first pitch and then determines whether or not the lifter has come into contact with the substrate, thereby detecting a touch position and calculating the control position based on the touch position.
Inventor(s): Susumu YAMAUCHI of Yamanashi (JP) for tokyo electron limited
IPC Code(s): H01L21/02, C23C16/30, C23C16/34, C23C16/40, C23C16/455, C23C16/56, H01L21/3205
CPC Code(s): H01L28/40
Abstract: a film forming method includes: preparing a substrate on which a dielectric layer is formed in a processing container; forming a first metal oxide layer on the dielectric layer by supplying a first metal-containing precursor and a first oxygen gas; and forming a second metal oxide layer on the first metal oxide layer by supplying a second metal-containing precursor and a second oxygen gas different from the first oxygen gas.
Tokyo Electron Limited patent applications on September 5th, 2024
- Tokyo Electron Limited
- C23C16/14
- C23C16/02
- C23C16/04
- C23C16/455
- C23C16/52
- CPC C23C16/14
- Tokyo electron limited
- C23C16/44
- C23C16/40
- H01L21/02
- CPC C23C16/4405
- CPC C23C16/4412
- C23C16/48
- CPC C23C16/45548
- C23C16/458
- CPC C23C16/4584
- G03F7/16
- H01L21/027
- CPC G03F7/162
- H01J37/32
- CPC H01J37/32183
- CPC H01J37/32256
- CPC H01J37/32605
- H01L21/67
- H01L21/677
- H01L21/687
- CPC H01L21/67115
- H01L21/68
- CPC H01L21/681
- C23C16/30
- C23C16/34
- C23C16/56
- H01L21/3205
- CPC H01L28/40
