Tokyo Electron Limited patent applications on July 25th, 2024
Patent Applications by Tokyo Electron Limited on July 25th, 2024
Tokyo Electron Limited: 15 patent applications
Tokyo Electron Limited has applied for patents in the areas of H01J37/32 (4), H01L21/67 (3), H01L21/677 (2), G03F7/00 (2), H01L21/324 (2) A61M11/042 (1), G03F7/706837 (1), G03F7/70866 (1), H01J37/20 (1), H01J37/32477 (1)
With keywords such as: substrate, processing, chamber, plasma, surface, layer, including, configured, wafer, and gas in patent application abstracts.
Patent Applications by Tokyo Electron Limited
Inventor(s): Junichi HARADA of Nirasaki City (JP) for tokyo electron limited, Takuma SHIDO of Oshu City (JP) for tokyo electron limited
IPC Code(s): A61M11/04
CPC Code(s): A61M11/042
Abstract: a temperature control method of a vaporizer that is provided with a heater to heat and vaporize an inflowing chemical liquid, includes determining an input power to the heater at a current time, based on an inflow rate of the chemical liquid into the vaporizer at each time in a first prediction interval from a current time to a first predetermined future time, a measured temperature of the vaporizer at the current time, and a predicted temperature of the vaporizer at each time in the first prediction interval.
Inventor(s): Takeshi SHIMOAOKI of Koshi City (JP) for tokyo electron limited, Arnaud Alain Jean DAUENDORFFER of Leuven (BE) for tokyo electron limited, Keisuke YOSHIDA of Nirasaki City (JP) for tokyo electron limited, Shinichiro KAWAKAMI of Koshi City (JP) for tokyo electron limited, Yuya KAMEI of Koshi City, Kumamoto (JP) for tokyo electron limited, Soichiro OKADA of Leuven (BE) for tokyo electron limited, Takafumi NIWA of Koshi City (JP) for tokyo electron limited
IPC Code(s): G03F7/00, G03F7/004, G03F7/16, G03F7/20, H01L21/033
CPC Code(s): G03F7/706837
Abstract: a substrate treatment method includes: developing a substrate which has a coating film of an inorganic resist formed on a base film thereon and has been subjected to an exposure treatment, with a developing solution to form a pattern of the inorganic resist; supplying an embedding solution to the developed substrate to fill a space between adjacent protrusions of the pattern; drying the filled embedding solution to form an embedded film on the substrate; and reducing a thickness of the embedded film by an ultraviolet ray.
Inventor(s): Yoji SAKATA of Kumamoto (JP) for tokyo electron limited, Shingo KATSUKI of Kumamoto (JP) for tokyo electron limited, Ryohei FUJISE of Kumamoto (JP) for tokyo electron limited, Kenichirou MATSUYAMA of Kumamoto (JP) for tokyo electron limited, Shinsuke TAKAKI of Kumamoto (JP) for tokyo electron limited, Hiroyuki IWAKI of Tokyo (JP) for tokyo electron limited, Hiroki TADATOMO of Tokyo (JP) for tokyo electron limited, Tomoya ONITSUKA of Kumamoto (JP) for tokyo electron limited
IPC Code(s): G03F7/00
CPC Code(s): G03F7/70866
Abstract: a substrate processing apparatus includes a first transfer path that is a transfer path for a substrate after mor film formation and before exposure, and a second transfer path that is a transfer path for the substrate after exposure; and one or a plurality of nitrogen atmosphere placement stages provided on at least one of the first transfer path and the second transfer path and configured to place the substrate in an environment with a nitrogen concentration of an atmosphere set higher than that of air.
Inventor(s): Tetsuji SATO of Miyagi (JP) for tokyo electron limited
IPC Code(s): H01J37/20, H01J37/32
CPC Code(s): H01J37/20
Abstract: a plasma processing apparatus comprises a plasma processing chamber, a substrate support disposed in the plasma processing chamber and including a lower electrode, an upper electrode structure disposed above the substrate support.
Inventor(s): Tetsuji SATO of Miyagi (JP) for tokyo electron limited
IPC Code(s): H01J37/20, H01J37/32
CPC Code(s): H01J37/20
Abstract: the upper electrode structure includes a cooling plate having a coolant channel, an electrode plate disposed below the cooling plate, and an electrostatic attracting film formed on a bottom surface of the cooling plate and configured to electrostatically attract the electrode plate. the electrostatic attracting film has a dielectric portion and at least one conductor portion disposed in the dielectric portion. the plasma processing apparatus further comprises a power supply electrically connected to the at least one conductor portion.
20240249921. IN-SITU FOCUS RING COATING_simplified_abstract_(tokyo electron limited)
Inventor(s): Minjoon Park of Albany NY (US) for tokyo electron limited, Andrew Metz of Albany NY (US) for tokyo electron limited
IPC Code(s): H01J37/32, H01L21/311
CPC Code(s): H01J37/32477
Abstract: a method of etching a substrate includes loading the substrate into a plasma etch chamber, the plasma etch chamber including a focus ring surrounding the substrate, the focus ring including a bulk material and a surface layer, the surface layer including a refractory metal; flowing a process gas including fluorine and carbon into the plasma etch chamber; coating a carbide layer over the surface layer of the focus ring, the coating including exposing the focus ring to a plasma generated from the process gas in the plasma etch chamber, the carbide layer including a carbide of the refractory metal; and etching the substrate, the etching including exposing the substrate to the plasma.
20240249922. PLASMA PROCESSING APPARATUS_simplified_abstract_(tokyo electron limited)
Inventor(s): Ryota SAKANE of Miyagi (JP) for tokyo electron limited
IPC Code(s): H01J37/32
CPC Code(s): H01J37/3255
Abstract: a plasma processing apparatus includes a chamber, a power source, a silicon member, and a conductive film. the chamber provides a plasma processing space. the power source supplies radio-frequency power for generating plasma in the plasma processing space. the silicon member is made of a silicon-containing material, is disposed in the chamber, and has a first surface facing the plasma processing space. the conductive film is made of a conductive material and formed on a second surface that does not face the plasma processing space of the silicon member.
20240249927. Plasma Etching with Metal Sputtering_simplified_abstract_(tokyo electron limited)
Inventor(s): Minjoon Park of Albany NY (US) for tokyo electron limited, Andrew Metz of Albany NY (US) for tokyo electron limited
IPC Code(s): H01J37/34, H01J37/32, H01L21/311
CPC Code(s): H01J37/3473
Abstract: a method of etching a substrate that includes: loading the substrate into a plasma etch chamber, the substrate including a patterned hard mask layer and an underlying layer, the plasma etch chamber including a chamber part having a surface including a refractory metal, and a first electrode; flowing a process gas including fluorine and carbon into the plasma etch chamber; applying a source power to the first electrode of the plasma etch chamber to generate a plasma in the plasma etch chamber; and etching the underlying layer, the etching including exposing the surface of the chamber part to the plasma to sputter the refractory metal from the surface of the chamber part, and forming a recess in the underlying layer and a conductive polymer layer including the refractory metal over sidewalls of the patterned hard mask layer and the underlying layer, the forming including exposing the substrate to the plasma.
20240249940. HEAT TREATMENT DEVICE AND TREATMENT METHOD_simplified_abstract_(tokyo electron limited)
Inventor(s): Yohei SANO of Kumamoto (JP) for tokyo electron limited
IPC Code(s): H01L21/027, G03F7/09, G03F7/20, H01L21/02, H01L21/324, H05B3/26
CPC Code(s): H01L21/0274
Abstract: a heat treatment device includes: a heating plate configured to support and heat a substrate on which a metal containing resist film is formed; a chamber configured to cover a processing space above the heating plate; a gas supply configured to supply a gas into the chamber along a gas flow path connected to an inside of the chamber, the gas flow path being directed toward the substrate; and an exhaust port configured to evacuate inside of the chamber.
Inventor(s): Kosuke YOSHIHARA of Koshi City (JP) for tokyo electron limited, Yuichi TERASHITA of Koshi City (JP) for tokyo electron limited, Yukinobu OTSUKA of Koshi City (JP) for tokyo electron limited, Shinsuke TAKAKI of Koshi City (JP) for tokyo electron limited, Hiroki TADATOMO of Tokyo (JP) for tokyo electron limited, Naoki SHIBATA of Tokyo (JP) for tokyo electron limited
IPC Code(s): H01L21/308, C23C16/04, C23C16/455, C23C16/46, H01L21/02, H01L21/324
CPC Code(s): H01L21/3081
Abstract: a substrate treatment method includes: developing a substrate which has a coating film of a metal-containing resist formed thereon and has been subjected to an exposure treatment and a heat treatment after the exposure treatment, the developing including: exposing the substrate to an acid atmosphere being an atmosphere containing gas of a weak acid under a pressure of an atmospheric pressure or higher; and removing a product produced by a reaction between the metal-containing resist and the gas of the weak acid, by heating the substrate.
20240249956. SUBSTRATE PROCESSING APPARATUS_simplified_abstract_(tokyo electron limited)
Inventor(s): Yohei NAKAGOMI of Nirasaki City, Yamanashi (JP) for tokyo electron limited, Ryo KUWAJIMA of Nirasaki City, Yamanashi (JP) for tokyo electron limited, Yohei MIDORIKAWA of Nirasaki City, Yamanashi (JP) for tokyo electron limited
IPC Code(s): H01L21/67
CPC Code(s): H01L21/67017
Abstract: a substrate processing apparatus for processing a substrate, includes: an inner chamber in which the substrate is accommodated; an outer chamber provided outside the inner chamber, and a processing gas supplier configured to supply a processing gas to an interior of the inner chamber, wherein the inner chamber is configured to be detachable from the outer chamber, and the outer chamber is provided such that the outer chamber does not come into contact with the processing gas supplied to the interior of the inner chamber.
Inventor(s): Shinsuke TAKAKI of Koshi City (JP) for tokyo electron limited, Seiji NAKASHIMA of Koshi City (JP) for tokyo electron limited, Akihiro TERAMOTO of Koshi City (JP) for tokyo electron limited, Ryo SHOBU of Koshi City (JP) for tokyo electron limited
IPC Code(s): H01L21/677, H01L21/67, H01L21/673
CPC Code(s): H01L21/67736
Abstract: a substrate processing system that performs substrate processing includes: a first processing system having one of a wet processing apparatus and a dry processing apparatus; a second processing system having the other one of the wet processing apparatus and the dry processing apparatus, wherein the first processing system includes a common stage, which is common to the first processing system and the second processing system and is configured to place thereon a container accommodating substrates before being subjected to the substrate processing, wherein the substrate processing system further includes: a first transfer system configured to transfer the substrates between the first processing system and the second processing system; and a second transfer system connected to at least the second processing system, and configured to transfer the substrates between the first processing system and the second processing system, or between another stage and the second processing system.
Inventor(s): Kousei IDE of Kumamoto (JP) for tokyo electron limited, Naruaki IIDA of Kumamoto (JP) for tokyo electron limited
IPC Code(s): H01L21/687, B65G47/90, H01L21/67, H01L21/677
CPC Code(s): H01L21/68707
Abstract: a substrate transfer device includes: a substrate holder configured to transfer a substrate to one of a plurality of processing modules that process the substrate; a base provided to be connected to the substrate holder; and a lift configured to move up and down the base. the lift includes: a plurality of rails and a plurality of seal belts arranged side by side in a left-right direction and extending in a longitudinal direction, a driver shared by the rails and configured to move up and down the base along an extending direction of each of the rails, a slider configured to move up and down while being supported by the lift and physically connected to the plurality of rails, and a connecting member. a portion of each seal belts is opened, and the slider and the base are connected to each other via the connecting member provided in the opening.
Inventor(s): H. Jim FULFORD of Marianna FL (US) for tokyo electron limited, Mark I. GARDNER of Cedar Creek TX (US) for tokyo electron limited, Partha MUKHOPADHYAY of Oviedo FL (US) for tokyo electron limited
IPC Code(s): H01L21/822, H01L27/088
CPC Code(s): H01L21/8221
Abstract: a semiconductor device includes a substrate having a working surface and a transistor formed in the substrate. the transistor includes a complex channel structure including a main portion extending in a main direction along the working surface, and tail portions each connected to a respective end of the main portion and extending along the working surface in a different direction from the main direction, a distal end of each tail portion including a source-drain (s-d) end such that the s-d ends are offset from the main portion of the complex channel structure. a gate all around (gaa) structure formed around only the main portion of the complex channel structure between the tail portions, and s-d contacts formed on respective s-d ends of the complex channel structure such that the s-d contacts are offset from the gaa structure.
20240250059. COMPLIANT CHUCK EDGE RING_simplified_abstract_(tokyo electron limited)
Inventor(s): Christopher NETZBAND of Albany NY (US) for tokyo electron limited, Nathan IP of Austin TX (US) for tokyo electron limited
IPC Code(s): H01L23/00
CPC Code(s): H01L24/74
Abstract: an apparatus for handling a semiconductor wafer includes an upper wafer holder that has a front surface, and a compliant ring that is mounted around the upper wafer holder and has a front surface. the front surface of the compliant ring is flush with the front surface of the upper wafer holder and extends from the front surface of the upper wafer holder in a radial direction without extending beyond the front surface of the wafer holder in an axial direction. a method includes providing a first wafer with a bonding surface and back surface, the back surface of the wafer in contact with the front surfaces of the wafer holder and the compliant ring. the first wafer contacts a second wafer so a bond forms between the wafers in a radial direction, the compliant ring flexibly restricting the movement of the first wafer relative to the second wafer.
20240250064. SUBSTRATE PROCESSING METHOD_simplified_abstract_(tokyo electron limited)
Inventor(s): Yoshihisa MATSUBARA of Tokyo (JP) for tokyo electron limited, Yoshihiro TSUTSUMI of Tokyo (JP) for tokyo electron limited, Yohei YAMASHITA of Kumamoto (JP) for tokyo electron limited
IPC Code(s): H01L23/00, B32B43/00, H01L23/544
CPC Code(s): H01L24/96
Abstract: the substrate processing method includes processes (a) to (d). the process (a) prepares a laminated substrate including a first substrate, a first absorption layer that absorbs laser light, a second absorption layer having an absorption coefficient with respect to the laser light higher than that of the first absorption layer, a device layer, and a second substrate in this order. the process (b) irradiates the laser light with respect to the first substrate from a side opposite to the second substrate. the process (c) irradiates the laser light transmitted through the first substrate on the first absorption layer, to form a modified layer in the first absorption layer. the process (d) separates the first substrate and the second substrate from each other using the modified layer as a starting point.
Tokyo Electron Limited patent applications on July 25th, 2024
- Tokyo Electron Limited
- A61M11/04
- CPC A61M11/042
- Tokyo electron limited
- G03F7/00
- G03F7/004
- G03F7/16
- G03F7/20
- H01L21/033
- CPC G03F7/706837
- CPC G03F7/70866
- H01J37/20
- H01J37/32
- CPC H01J37/20
- H01L21/311
- CPC H01J37/32477
- CPC H01J37/3255
- H01J37/34
- CPC H01J37/3473
- H01L21/027
- G03F7/09
- H01L21/02
- H01L21/324
- H05B3/26
- CPC H01L21/0274
- H01L21/308
- C23C16/04
- C23C16/455
- C23C16/46
- CPC H01L21/3081
- H01L21/67
- CPC H01L21/67017
- H01L21/677
- H01L21/673
- CPC H01L21/67736
- H01L21/687
- B65G47/90
- CPC H01L21/68707
- H01L21/822
- H01L27/088
- CPC H01L21/8221
- H01L23/00
- CPC H01L24/74
- B32B43/00
- H01L23/544
- CPC H01L24/96
