Texas instruments incorporated (20240178318). LOCOS FILLET FOR DRAIN REDUCED BREAKDOWN IN HIGH VOLTAGE TRANSISTORS simplified abstract
Contents
- 1 LOCOS FILLET FOR DRAIN REDUCED BREAKDOWN IN HIGH VOLTAGE TRANSISTORS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 LOCOS FILLET FOR DRAIN REDUCED BREAKDOWN IN HIGH VOLTAGE TRANSISTORS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
LOCOS FILLET FOR DRAIN REDUCED BREAKDOWN IN HIGH VOLTAGE TRANSISTORS
Organization Name
texas instruments incorporated
Inventor(s)
Martin B. Mollat of Gainesville TX (US)
Henry L. Edwards of Garland TX (US)
Alexei Sadovnikov of Sunnyvale CA (US)
LOCOS FILLET FOR DRAIN REDUCED BREAKDOWN IN HIGH VOLTAGE TRANSISTORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178318 titled 'LOCOS FILLET FOR DRAIN REDUCED BREAKDOWN IN HIGH VOLTAGE TRANSISTORS
Simplified Explanation
The integrated circuit described in the abstract includes a gate electrode, source region, drain region, and dielectric layer with varying thicknesses and a fillet connecting different segments of the lateral perimeter.
- The integrated circuit includes a source region and a drain region spaced apart in a semiconductor layer.
- A gate electrode extends between the source and drain regions.
- A dielectric layer is between the gate electrode and the semiconductor layer.
- The dielectric layer has a first portion with a first thickness and a second portion with a greater second thickness.
- The second portion of the dielectric layer forms a fillet connecting different segments of the lateral perimeter surrounding the source region.
Potential Applications
This technology could be applied in the development of high-performance integrated circuits for various electronic devices such as smartphones, computers, and IoT devices.
Problems Solved
This technology helps in reducing leakage currents and improving the overall efficiency and performance of integrated circuits by providing better control over the flow of electrons.
Benefits
The benefits of this technology include enhanced functionality, improved energy efficiency, and increased reliability of integrated circuits.
Potential Commercial Applications
The potential commercial applications of this technology include the semiconductor industry, electronics manufacturing companies, and research institutions working on advanced electronic devices.
Possible Prior Art
One possible prior art for this technology could be the development of similar integrated circuits with dielectric layers of varying thicknesses to improve performance and efficiency.
What are the specific electronic devices that could benefit from this technology?
Electronic devices such as smartphones, tablets, laptops, and IoT devices could benefit from the improved performance and efficiency of integrated circuits using this technology. These devices rely on integrated circuits for various functions and could see enhanced functionality with this innovation.
How does the fillet in the dielectric layer contribute to the overall performance of the integrated circuit?
The fillet in the dielectric layer helps in connecting different segments of the lateral perimeter, providing better control over the flow of electrons and reducing leakage currents. This contributes to the overall efficiency and performance of the integrated circuit by optimizing the electron flow paths.
Original Abstract Submitted
an integrated circuit includes a source region and a drain region spaced apart and extending into a semiconductor layer. a gate electrode extends between the source and the drain regions, and a dielectric layer is between the gate electrode and the semiconductor layer. the dielectric layer includes a first portion having a first thickness and a second portion having a second greater second thickness and a lateral perimeter surrounding the source region. the lateral perimeter includes a first edge having a first linear segment extending between the source region and the drain region along a first direction and a second edge having a second linear segment extending over the semiconductor layer along a different second direction. a fillet of the second portion connects the first linear segment and the second linear segment of the lateral perimeter.
